Panasonic Multi Chip Discrete UP05C8GF, Specifications

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Multi Chip Discrete
Publication date: January 2008 SJJ00352BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP05C8GF
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits

Features

Two elements incorporated into one package (Tr + CCD load device)

Downsizing of the equipment and costs can be reduced through reduction of
the number of parts

Basic Part Number

2SC3932 + CCD load device

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open)
V
CBO
30 V
Collector-emitter voltage
(Base open)
V
CEO
20 V
Emitter-base voltage
(Collector open)
V
EBO
3 V
Collector current I
C
50 mA
CCD
load device
Limiting element voltage V
max
40 V
Limiting element current I
max
10 mA
Overall
Total power dissipation
*
P
T
125 mW
Junction temperature T
j
125 ° C
Storage temperature T
stg
- 55 to +125 ° C
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm

Package

Code
SSMini6-F2

Pin Name
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector

Marking Symbol: 4V

Internal Connection
3
(G)
(S)
4
1
(E)
2
(B)
(C)
6
(D)
5
Tr
FET