Panasonic Multi Chip Discrete UP05C8G, Specification Sheet

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UP05C8G
SJJ00348AED
3
I
C
 V
BE
V
CE(sat)
 I
C
h
FE
 I
C
C
ob
 V
CB
0 0.4 0.6 0.2 1.2 0.8 1.0 1.4
0
40
50
10
20
30
Collector current
I
C
(
mA
)
Base-emitter voltage V
BE
(V)
UP05C8G_I
C
-V
BE
V
CE
= 10 V
T
a
= 85 ° C
− 25 ° C
25 ° C
0 25 15 20 10 5 30 35
100
1
10
0.1
UP05C8B_ C
ob
- V
CB
T
a
= 25 ° C
f = 1 MHz
Collector-base voltage V
CB
(V)
Collector output capacitanc
e
(Common base, input open circuited)
C
ob
(
pF
)
0.1 1 10 100
0.1
1
0.01
UP05C8G_
V
CE(sat)
-
I
C
Collector
-emitter saturation voltage
V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 85 ° C
25 ° C
− 25 ° C
1 10 100
50
300
200
250
150
100
350
0
UP05C8G_ h
FE
- I
C
Forward current transfer ratio
h
FE
Collector current I
C
(mA)
T
a
= 85 ° C
− 25 ° C
25 ° C
V
CE
= 10 V
I
P
 V
DS
Characteristics charts of CCD load device
0 4 2 14 10 6 8 12 16
0
3.5
4.0
3.0
4.5
0.5
1.0
2.0
2.5
1.5
Peak current
I
P
(
mA
)
Drain-source voltage V
DS
(V)
UP05C8G_I
P
-V
DS
V
G
= 0