UP05C8G
2
SJJ00348AED
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Tr
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 100
m
A, I
E
= 0
30
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10
m
A, I
C
= 0
3
V
Base-emitter voltage
V
BE
V
CE
= 10 V, I
C
= 2 mA
720
mV
Forward current transfer ratio
h
FE
V
CE
= 10 V, I
C
= 2 mA
25
250
Transition frequency
*
f
T
V
CB
= 10 V, I
E
=
-
15 mA, f = 200 MHz
800
1 200
MHz
Power gain
G
P
V
CB
= 10 V, I
E
=
-
1 mA, f = 100 MHz
20
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*: Pulse measurement
CCD Load Device
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Pinchi off current
I
P
V
DS
= 10 V, V
G
= 0
3.5
5.5
mA
Output impedance
Z
O
V
DS
= 10 V, V
G
= 0
0.05
M
W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
P
T
T
a
Common characteristics chart
0
40
80
120
0
140
120
100
80
40
20
60
To
tal power dissipation
P
T
(
mW
)
Ambient temperature T
a
(
°
C)
UN05C8B_P
T
-T
a
I
C
V
CE
I
C
I
B
I
B
V
BE
Characteristics charts of Tr
0
4
2
8
10
6
12
0
35
30
25
40
5
20
15
10
Collector current
I
C
(
mA
)
Collector-emitter voltage V
CE
(V)
UP05C8G_I
C
-V
CE
T
a
=
25
°
C
I
B
=
300
µ
A
200
µ
A
150
µ
A
100
µ
A
50
µ
A
250
µ
A
0
0.4
0.6
0.2
1.0
0.8
1.2
0
50
40
60
10
30
20
Collector current
I
C
(
mA
)
Base current I
B
(mA)
UP05C8G_I
C
-I
B
V
CE
=
10 V
0.4
0.2
0.1
0.3
0.5 0.6 0.7 0.8 0.9
0
0
0.7
0.6
0.8
0.2
0.1
0.3
0.5
0.4
Base current
I
B
(
mA
)
Base-emitter voltage V
BE
(V)
UP05C8G_I
B
-V
BE
V
CE
=
10 V
T
a
=
25
°
C
