Panasonic Multi Chip Discrete UP05C8G, Specification Sheet, Page: 2 / 4

UP05C8G
2
SJJ00348AED

Electrical Characteristics T
a
= 25 ° C ± 3 ° C

Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 m A, I
E
= 0 30 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 m A, I
C
= 0 3 V
Base-emitter voltage V
BE
V
CE
= 10 V, I
C
= 2 mA 720 mV
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 2 mA 25 250 
Transition frequency * f
T
V
CB
= 10 V, I
E
= - 15 mA, f = 200 MHz 800 1 200 MHz
Power gain G
P
V
CB
= 10 V, I
E
= - 1 mA, f = 100 MHz 20 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*: Pulse measurement

CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current I
P
V
DS
= 10 V, V
G
= 0 3.5 5.5 mA
Output impedance Z
O
V
DS
= 10 V, V
G
= 0 0.05 M W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
P
T
 T
a
Common characteristics chart
0 40 80 120
0
140
120
100
80
40
20
60
To
tal power dissipation
P
T
(
mW
)
Ambient temperature T
a
( ° C)
UN05C8B_P
T
-T
a
I
C
 V
CE
I
C
 I
B
I
B
 V
BE
Characteristics charts of Tr
0 4 2 8 10 6 12
0
35
30
25
40
5
20
15
10
Collector current
I
C
(
mA
)
Collector-emitter voltage V
CE
(V)
UP05C8G_I
C
-V
CE
T
a
= 25 ° C
I
B
= 300 µ A
200 µ A
150 µ A
100 µ A
50 µ A
250 µ A
0 0.4 0.6 0.2 1.0 0.8 1.2
0
50
40
60
10
30
20
Collector current
I
C
(
mA
)
Base current I
B
(mA)
UP05C8G_I
C
-I
B
V
CE
= 10 V
0.4 0.2 0.1 0.3 0.5 0.6 0.7 0.8 0.9
0
0
0.7
0.6
0.8
0.2
0.1
0.3
0.5
0.4
Base current
I
B
(
mA
)
Base-emitter voltage V
BE
(V)
UP05C8G_I
B
-V
BE
V
CE
= 10 V
T
a
= 25 ° C