Zener Diodes
Publication date: April 2008
SKE00042AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MALS068G
Silicon planar type
For ESD protection
Overview
MALS068G is optimal for cell phones and AV application, all types of
I/O circuits.
Features
High resistance to surge voltages: 30 kV guaranteed
Low terminal capacitance C
t
for low loss, low distortion, and good
retention of signal waveforms.
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Total power dissipation
*1
P
T
150
mW
Electrostatic discharge
*2
ESD
±
30
kV
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
-55 to +150
°
C
Note) *1: P
T
= 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330
Ω
, Contact discharge: 10 times)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Breakdown voltage
*
V
BR
I
R
= 1 mA
6.4
6.8
7.2
V
Reverse current
I
R
V
R
= 4 V
0.5
m
A
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
50
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * : V
BR
guaranted 20 ms after current
fl
ow.
The temperature must be controlled 25
°
C for V
BR
measurement.
V
BR
value measured at other temperature must be adjusted to V
BR
(25
°
C).
Package
Code
SSMini2-F4
Pin Name
1: Anode
2: Cathode
Marking Symbol: RE
