Switching Diodes
1
Publication date: March 2004
SKF00013BED
MA2J113
(MA113)
Silicon epitaxial planar type
For switching circuits
■
Features
•
Allowing high-density mounting
•
Ensuring the forward current (Average) capacity I
F(AV)
=
200 mA
•
High breakdown voltage: V
R
=
80 V
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current (Average)
I
F(AV)
200
mA
Peak forward current
I
FM
600
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
200 mA
1.1
V
Reverse current
I
R1
V
R
=
15 V
50
nA
I
R2
V
R
=
75 V
500
I
R3
V
R
=
75 V, T
a
=
100
°
C
100
µ
A
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
4
pF
Reverse recovery time
*
t
rr
I
F
=
10 mA, V
R
=
6 V
10
ns
I
rr
=
0.1 I
R
, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: 1D
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
5˚
5˚
1.25
±
0.1
0.7
±
0.1
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0 to 0.1
(0.15)
0.16
0.5
±
0.1
1
2
+0.1
–0.06
0.35
±
0.1
0 to 0.1
Note) *: t
=
1 s
This product complies with the RoHS Directive (EU 2002/95/EC).
