SHD00639BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: December 2008
1
Light Emitting Diodes
LNJ0F1C5FRA4
Hight Bright Surface Mounting Chip LED
Strobe Type
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Power dissipation
P
D
103
mW
Forward current
I
F
25
mA
Pulse forward current
*
I
FP
50
mA
Reverse current
I
R
100
mA
Operating ambient temperature
T
opr
–30 to +85
°
C
Storage temperature
T
stg
–40 to +100
°
C
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Luminous intensity
I
O-20
I
F
= 20 mA / chip
1 350
1 800
mcd
Forward voltage
V
F
I
F
= 20 mA / chip
3.0
3.4
4.0
V
Chromaticity coordinates
x
I
F
= 20 mA / chip
0.280
0.320
y
I
F
= 20 mA / chip
0.260
0.383
0
0
10
20
30
40
50
60
20
40
60
80
100
0
1.0
2.0
3.0
4.0
5.0
6.0
−
20
20
40
60
80
100
10
1
3
5
10
30
50
100
30
50
100
300
500
1 000
20
20
40
40
60
60
80
80
100
100
1
3
5
10
30 50
100
0
°
10
°
−
10
°
20
°
−
20
°
30
°
−
30
°
40
°
−
40
°
50
°
−
50
°
60
°
−
60
°
70
°
−
70
°
80
°
−
80
°
80
°
60
°
40
°
20
°
90
°
−
90
°
10
50
30
500
300
100
1 000
5 000
3 000
10 000
Y
X
Y
X
DC
IFP
Directive characteristics
Relative luminous intensity (%)
Ambient temperature T
a
(
°
C)
Ambient temperature T
a
(
°
C)
Forward current
I
F
(mA)
Forward voltage V
F
(V)
Luminous intensity
I
O
(mcd)
Relative luminous intensity (%)
Forward current
I
F
(mA)
Forward current I
F
(mA)
I
O
I
F
I
F
V
F
I
F
T
a
Relative luminous intensity
T
a
Lighting Color
White