Panasonic Light Emitting Diodes LNJ414K8YRA, Specifications

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SHD00652BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: December 2008
1
Light Emitting Diodes
LNJ414K8YRA
Surface Mounting Chip LED
USS Type

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Power dissipation P
D
40 mW
Forward current I
F
15 mA
Pulse forward current * I
FP
50 mA
Reverse voltage V
R
3 V
Operating ambient temperature T
opr
–30 to +85 ° C
Storage temperature T
stg
–40 to +100 ° C
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.

Electro-Optical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity * I
O
I
F
= 10 mA 0.75 1.5 mcd
Reverse current I
R
V
R
= 3 V 10 µA
Forward voltage V
F
I
F
= 10 mA 2.0 2.6 V
Peak emission wavelength λ
P
I
F
= 10 mA 590 nm
Spectral half band width Δλ I
F
= 10 mA 30 nm
Note) *: Measurement tolerance: ± 20%
0
0
0
10
20
30
20 40 60 80 100
0 1.6 1.8 2.0 2.2 2.4 − 20 20 40 60 80 100
10 1
3
5
10
30
50
100
30
50
100
300
500
1 000
20 20 40 40 60 60 80 80 100 100
0
20
40
60
80
100
600 550 650 700
1 3 5 10 30 50 100
0 °
10 ° 10 °
20 ° 20 °
30 ° 30 °
40
°
40
°
50 ° 50 °
60 ° 60 °
70 ° 70 °
80 ° 80 °
80 °
60 °
40 °
20 °
90 ° 90 °
0.01
0.05
0.03
0.5
0.3
0.1
1
5
3
10
I
O
 I
F
I
F
 V
F
I
F
 T
a
Directive characteristics
Relative luminous intensity (%)
Ambient temperature T
a
( ° C)
Ambient temperature T
a
( ° C)
Forward current
I
F
(mA)
Forward voltage V
F
(V) Forward current I
F
(mA)
Luminous intensity
I
O
(mcd)
Relative luminous intensity (%)
Relative luminous intensity  T
a
Relative luminous intensity  λ
P
Peak emission wavelength λ
P
(nm)
Relative luminous intensity (%)
Forward current
I
F
(mA)

Lighting Color

Amber