NXP Semiconductors
UM11620
FRDMGD3160XM3EVM half-bridge evaluation board
4.3 Device features
Device
Description
Features
GD3160
The GD3160 is an
advanced single
channel gate driver for
IGBT and SiC.
•
Compatible with current sense and temp sense
IGBTs
•
DESAT detection capability for detecting V
CE
desaturation condition
•
Fast short-circuit protection for IGBTs with current
sense feedback
•
Compliant with automotive safety integrity level
(ASIL) C/D ISO 26262 functional safety requirements
•
SPI interface for safety monitoring, programmability,
and flexibility
•
Integrated galvanic signal isolation
•
Integrated gate drive power stage capable of 15 A
peak source and sink
•
Interrupt pin for fast response to faults
•
Compatible with negative gate supply
•
Compatible with 200 V to 1700 V IGBT and SiC
MOSFET, power range > 125 kW
Table 1. Device features
4.4 Board description
The FRDMGD3160XM3EVM is a half-bridge evaluation board populated with two
GD3160 single channel IGBT or SiC gate drive devices. The board supports connection
to an FRDM-KL25Z microcontroller for SPI communication configuration programming
and monitoring. The board includes DESAT circuitry for short-circuit detection and
implementation of GD3160 shutdown protection capabilities.
The evaluation board is designed to connect to an XM3 module for evaluation of the
GD3160 performance and capabilities.
UM11620
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© NXP B.V. 2021. All rights reserved.
User guide
Rev. 1 — 10 June 2021
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