2010 Sep 13
3
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; T
j
= 25
°
C; unless otherwise specified.
Note
1. See application note RNR-T45-99-B-0514.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
supply voltage
RF input AC coupled
−
4.5
V
V
CTRL
voltage on control pin
−
2
V
I
S
supply current (DC)
forced by DC voltage on RF input
or I
CTRL
−
30
mA
I
CTRL
control current
−
3
mA
P
tot
total power dissipation
T
s
≤
100
°
C
−
135
mW
T
stg
storage temperature
−
65
+150
°
C
T
j
operating junction temperature
−
150
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
350
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
V
VS-OUT
= 2.5 V; I
CTRL
= 0.4 mA
3
4.5
6
mA
V
VS-OUT
= 2.5 V; I
CTRL
= 1.0 mA
8
11
15
mA
MSG
maximum stable gain
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
−
24
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
−
16
−
dB
|
s
21
|
2
insertion power gain
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
18
19
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
13
14
−
dB
s
12
isolation
V
VS-OUT
= 2.5 V; I
VS-OUT
= 0;
f = 900 MHz
−
26
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 0;
f = 1800 MHz
−
20
−
dB
NF
noise figure
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz;
Γ
S
=
Γ
opt
−
1.8
2
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz;
Γ
S
=
Γ
opt
−
1.8
2
dB
IP3
(in)
input intercept point; note 1
V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.6 mA;
f = 900 MHz
−
−
6.5
−
dBm
V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.5 mA;
f = 1800 MHz
−
−
4.8
−
dBm
