2010 Sep 13
2
NXP Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
FEATURES
•
Low current
•
Very high power gain
•
Low noise figure
•
Integrated temperature compensated biasing
•
Control pin for adjustment bias current
•
Supply and RF output pin combined.
APPLICATIONS
•
RF front end
•
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
•
Low noise amplifiers
•
Satellite television tuners (SATV)
•
High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
PINNING
PIN
DESCRIPTION
1
GND
2
RF in
3
CTRL (bias current control)
4
V
S
+ RF out
handbook, halfpage
Top view
MAM427
2
1
4
3
BIAS
CIRCUIT
CTRL
RFin
GND
V
S+RFout
Marking code:
A3*
Fig.1 Simplified outline (SOT343R) and symbol.
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
−
4.5
V
I
S
DC supply current
V
VS-OUT
= 2.5 V; I
CTRL
= 1 mA;
RF input AC coupled
11
−
mA
MSG
maximum stable gain
V
VS-OUT
= 2.5 V; f = 1800 MHz;
T
amb
= 25
°
C
16
−
dB
NF
noise figure
V
VS-OUT
= 2.5 V; f = 1800 MHz;
Γ
S
=
Γ
opt
1.8
−
dB
