2
TC7660S
SUPER CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7660S-14 9/16/96
© 2001 Microchip Technology Inc. DS21467A
ELECTRICAL CHARACTERISTICS:
T
A
= +25
°
C, V
+
= 5V, C
OSC
= 0, Test Circuit (Figure 1), unless otherwise
indicated.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
+
Supply Current
R
L
=
∞
—
80
160
µ
A
(Boost pin OPEN or GND)
0
°
C
≤
T
A
≤
+70
°
C
—
—
180
– 40
°
C
≤
T
A
≤
+85
°
C
—
—
180
– 55
°
C
≤
T
A
≤
+125
°
C
—
—
200
I
+
Supply Current
0
°
C
≤
T
A
≤
+70
°
C
—
—
300
µ
A
(Boost pin = V
+
)
– 40
°
C
≤
T
A
≤
+85
°
C
—
—
350
– 55
°
C
≤
T
A
≤
+125
°
C
—
—
400
V
+
H
Supply Voltage Range, High
Min
≤
T
A
≤
Max,
3
—
12
V
R
L
= 10k
Ω
, LV Open
V
+
L
Supply Voltage Range, Low
Min
≤
T
A
≤
Max,
1.5
—
3.5
V
R
L
= 10k
Ω
, LV to GND
R
OUT
Output Source Resistance
I
OUT
= 20mA
—
60
100
Ω
I
OUT
= 20mA, 0
°
C
≤
T
A
≤
+70
°
C
—
70
120
I
OUT
= 20mA, – 40
°
C
≤
T
A
≤
+85
°
C
—
70
120
I
OUT
= 20mA, – 55
°
C
≤
T
A
≤
+125
°
C
—
105
150
V
+
= 2V, I
OUT
= 3mA, LV to GND
0
°
C
≤
T
A
≤
+70
°
C
—
—
250
Ω
– 55
°
C
≤
T
A
≤
+125
°
C
—
—
400
F
OSC
Oscillator Frequency
Pin 7 open; Pin 1 open or GND
—
10
—
kHz
Boost Pin = V
+
—
45
—
P
EFF
Power Efficiency
R
L
= 5 k
Ω
; Boost Pin Open
96
98
—
%
T
MIN
≤
T
A
≤
T
MAX
; Boost Pin Open
95
98
—
Boost Pin = V
+
—
88
—
V
OUT
E
FF
Voltage Conversion Efficiency
R
L
=
∞
99
99.9
—
%
Z
OSC
Oscillator Impedance
V
+
= 2V
—
1
—
M
Ω
V
+
= 5V
—
100
—
k
Ω
NOTES: 1. Connecting any input terminal to voltages greater than V
+
or less than GND may cause destructive latch-up. It is recommended that no
inputs from sources operating from external supplies be applied prior to "power up" of the TC7660S.
2. Derate linearly above 50
°
C by 5.5mW/
°
C.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +13V
LV, Boost, OSC Inputs
Voltage (Note 1) ......................... – 0.3V to (V
+
+0.3V)
for V
+
< 5.5V
(V
+
– 5.5V) to (V
+
+0.3V)
for V
+
> 5.5V
Current Into LV (Note 1) ...................... 20
µ
A for V
+
> 3.5V
Output Short Duration (V
SUPPLY
≤
5.5V) ......... Continuous
Power Dissipation (T
A
≤
70
°
C) (Note 2)
CerDIP ............................................................ 800mW
Plastic DIP ...................................................... 730mW
SOIC ...............................................................470mW
Operating Temperature Range
C Suffix .................................................. 0
°
C to +70
°
C
E Suffix ............................................. – 40
°
C to +85
°
C
M Suffix ........................................... – 55
°
C to +125
°
C
Storage Temperature Range ................ – 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) ................. +300
°
C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
