ADSP21487KSWZ-2B (DIGITAL : U1021)
TOP VIEW
(PINS DOWN)
1
44
45
89
88
132
176
133
PIN 1
GND PAD
(PIN 177)
at BOTTOM
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
SDDQM
1
V
DD
_
EXT
45
DAI_P10
89
V
DD
_
INT
133
MS0
2
DPI_P08
46
V
DD
_
INT
90
FLAG0
134
SDCKE
3
DPI_P07
47
V
DD
_
EXT
91
FLAG1
135
V
DD
_
INT
4
V
DD
_
INT
48
DAI_P20
92
FLAG2
136
CLK_CFG1
5
DPI_P09
49
V
DD
_
INT
93
NC
137
ADDR0
6
DPI_P10
50
DAI_P08
94
FLAG3
138
BOOT_CFG0
7
DPI_P11
51
DAI_P14
95
NC
139
V
DD
_
EXT
8
DPI_P12
52
DAI_P04
96
NC
140
ADDR1
9
DPI_P13
53
DAI_P18
97
V
DD
_
EXT
141
ADDR2
10
DPI_P14
54
DAI_P17
98
NC
142
ADDR3
11
DAI_P03
55
DAI_P16
99
V
DD
_
INT
143
ADDR4
12
NC
56
DAI_P12
100
TRST
144
ADDR5
13
V
DD
_
EXT
57
DAI_P15
101
NC
145
BOOT_CFG1
14
NC
58
V
DD
_
INT
102
EMU
146
GND
15
NC
59
DAI_P11
103
DATA0
147
ADDR6
16
NC
60
V
DD
_
EXT
104
DATA1
148
ADDR7
17
NC
61
V
DD
_
INT
105
DATA2
149
NC
18
V
DD
_
INT
62
BOOT_CFG2
106
DATA3
150
NC
19
NC
63
V
DD
_
INT
107
TDO
151
ADDR8
20
NC
64
AMI_ACK
108
DATA4
152
ADDR9
21
V
DD
_
INT
65
GND
109
V
DD
_
EXT
153
CLK_CFG0
22
NC
66
THD_M
110
DATA5
154
V
DD
_
INT
23
NC
67
THD_P
111
DATA6
155
CLKIN
24
V
DD
_
INT
68
V
DD
_
THD
112
V
DD
_
INT
156
XTAL
25
NC
69
V
DD
_
INT
113
DATA7
157
ADDR10
26
WDTRSTO
70
V
DD
_
INT
114
TDI
158
SDA10
27
NC
71
MS1
115
SDCLK
159
V
DD
_
EXT
28
V
DD
_
EXT
72
V
DD
_
INT
116
V
DD
_
EXT
160
V
DD
_
INT
29
DAI_P07
73
WDT_CLKO
117
DATA8
161
ADDR11
30
DAI_P13
74
WDT_CLKIN
118
DATA9
162
ADDR12
31
DAI_P19
75
V
DD
_
EXT
119
DATA10
163
ADDR17
32
DAI_P01
76
ADDR23
120
TCK
164
ADDR13
33
DAI_P02
77
ADDR22
121
DATA11
165
V
DD
_
INT
34
V
DD
_
INT
78
ADDR21
122
DATA12
166
ADDR18
35
NC
79
V
DD
_
INT
123
DATA14
167
RESETOUT/RUNRSTIN 36
NC
80
ADDR20
124
DATA13
168
V
DD
_
INT
37
NC
81
ADDR19
125
V
DD
_
INT
169
DPI_P01
38
NC
82
V
DD
_
EXT
126
DATA15
170
DPI_P02
39
NC
83
ADDR16
127
SDWE
171
DPI_P03
40
V
DD
_
EXT
84
ADDR15
128
SDRAS
172
V
DD
_
INT
41
V
DD
_
INT
85
V
DD
_
INT
129
RESET
173
DPI_P05
42
DAI_P06
86
ADDR14
130
TMS
174
DPI_P04
43
DAI_P05
87
AMI_WR
131
SDCAS
175
DPI_P06
44
DAI_P09
88
AMI_RD
132
V
DD
_
INT
176
GND
177*
* at BOTTOM
W9864G6KH-6(DIGITAL : U1020)
Pin description
W9864G
6KH
Pub
lic
ati
on R
ele
as
e
D
ate
: N
ov
. 1
2,
2
01
3
- 4 -
Re
vis
ion
A
02
4.
PI
N C
O
NF
IG
URA
TI
O
N
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
LDQ
M
CA
S
RA
S
CS
BS
0
BS
1
A1
0/
AP
A0
A1
A2
A3
DQ
15
DQ
14
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
DQ
8
NC
UD
Q
M
CL
K
CK
E
NC
A1
1
A9
A8
A7
A6
A5
A4
VDD
Q
VDD
Q
VS
SQ
VS
SQ
VD
D
VD
D
VS
S
VS
SQ
VS
SQ
VDD
Q
VS
S
VS
S
W
E
VDD
VD
D
Q
W9864G6KH
Publication Release Date: Nov. 12, 2013
- 5 -
Revision A02
5. PIN DESCRIPTION
PIN NUMBER PIN NAME
FUNCTION
DESCRIPTION
23 ~ 26, 22,
29 ~35
A0 A11
Address
Multiplexed pins for row and column address.
Row address: A0 A11. Column address: A0 A7.
A10 is sampled during a precharge command to
determine if all banks are to be precharged or bank
selected by BS0, BS1.
20, 21
BS0, BS1
Bank Select
Select bank to activate during row address latch time,
or bank to read/write during address latch time.
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
45, 47, 48, 50,
51, 53
DQ0 DQ15
Data
Input/ Output
Multiplexed pins for data output and input.
19
CS
Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
18
Row Address
Strobe
Command input. When sampled at the rising edge of
the clock
,
CAS and WE define the
operation to be executed.
17
CAS
Column
Address Strobe Referred to
16
WE
Write Enable Referred to
39, 15
UDQM
LDQM
Input/output
mask
The output buffer is placed at Hi-Z (with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
38
CLK
Clock Inputs System clock used to sample inputs on the rising
edge of clock.
37
CKE
Clock Enable
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend
mode, or Self Refresh mode is entered.
1, 14, 27
V
DD
Power
Power for input buffers and logic circuit inside DRAM.
28, 41, 54
V
SS
Ground
Ground for input buffers and logic circuit inside
DRAM.
3, 9, 43, 49
V
DDQ
Power for I/O
buffer
Separated power from V
DD
, to improve DQ noise
immunity.
6, 12, 46, 52
V
SSQ
Ground for I/O
buffer
Separated ground from V
SS
, to improve DQ noise
immunity.
36, 40
NC
No Connection No connection.
52
Caution in
servicing
Electrical
Mechanical
Repair Information
Updating