LG U8210, Service Manual, Page: 34 / 231

3. TECHNICAL BRIEF
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Fabricated onto a single Gallium Arsenide (GaAs) die, one Heterojunction Bipolar Transistor (HBT) PA
block supports the GSM850/900 bands and the other supports the DCS1800 and PCS1900 bands.
Both PA blocks share common power supply pins to distribute current. The GaAs die, the Silicon (Si)
die, and the passive components are mounted on a multi-layer laminate substrate. The assembly is
encapsulated with plastic overmold.
RF input and output ports of the SKY77328 are internally matched to a 50
Ω
load to reduce the
number of external components for a quad-band design.
Extremely low leakage current (2.5
µ
A, typical) of the dual PA module maximizes handset standby
time. The SKY77328 also contains band-select switching circuitry to select GSM (logic 0) or DCS/PCS
(logic 1) as determined from the Band Select (BS) signal. In Figure 3.5.6-1 below, the BS pin selects
the PA output (DCS/PCS OUT or GSM850/900 OUT) and the Analog Power Control (VAPC) controls
the level of output power.
The VBATT pin connects to an internal current-sense resistor and interfaces to an integrated power
amplifier control (iPAC TM ) function, which is insensitive to variations in temperature, power supply,
process, and input power. The ENABLE input allows initial turn-on of PAM circuitry to minimize battery
drain.
Figure 3.5.6-1 GSM PA functional block diagram