12. EXPLODED VIEW & REPLACEMENT PART LIST
- 217 -
Copyright © 2014 LG Electronics. Inc. All right reserved.
Only for training and service purposes
LGE Internal Use Only
Level
Location no
Description
P/N
Specification
Remark
6
C1314
C1316
C1317
C1318
Capacitor,Ceramic,
Chip
ECCH0009103 C0603C0G1H101JT00NN 100pF 5% 50V C0G -
55TO+125C 0603 R/TP - - TDK CORPORATION
6
C2304
C2305
Capacitor,Ceramic,
Chip
EAE62726601
CL03A225MQ3CRNC 2.2uF -20TO20% 6.3V X5R -
55TO+85C 0603 R/TP 0.3T - SAMSUNG
ELECTRO-MECHANICS CO., LTD.
6
C2306
C2307
C2308
C2309
Capacitor,Ceramic,
Chip
ECCH0017301
CL03A105MQ3CSNH 0.000001F 20% 6.3V X5R -
45TO+85C 0603 R/TP - SAMSUNG ELECTRO-
MECHANICS CO., LTD.
6
R1514
Resistor,Chip
ERHZ0000236 MCR01MZP5F2001 2KOHM 1% 1/16W 1005 R/TP -
ROHM.
6
C5106
Inductor,Multilayer,
Chip
ELCH0001034
HK1005 3N3S-T 3.3NH 0.3NH - 300mA 0.16OHM
6GHZ 8 SHIELD NONE 1.0X0.5X0.5MM R/TP
TAIYO YUDEN CO.,LTD
6
R1304
Resistor,Chip
ERHY0024501 RC0201JR-0736RL 36OHM 5% 1/20W 0603 R/TP -
YAGEO CORPORATION
6
C1104
Inductor,Multilayer,
Chip
EAP61866701
LG HK0603 82NJ-T 82NH 5% - 70mA - - 3.37OHM
1GHZ 4 SHIELD 0 0.6X0.3X0.3MM R/TP TAIYO
YUDEN CO.,LTD
6
C4101
C5111
C5114
C9602
Capacitor,Ceramic,
Chip
ECCH0007804
CL05A225MP5NSNC 2.2uF 20% 10V X5R -
55TO+85C 1005 R/TP 0.5MM - SAMSUNG
ELECTRO-MECHANICS CO., LTD.
6
R4130
Resistor,Chip
ERHZ0000529 MCR01MZP5J152 1.5KOHM 5% 1/16W 1005 R/TP -
ROHM.
6
C5117
Capacitor,Ceramic,
Chip
ECCH0000151
CL05B472KB5NNNC 4.7nF 10% 25V X7R -
55TO+125C 1005 R/TP - - SAMSUNG ELECTRO-
MECHANICS CO., LTD.
6
R4104
Resistor,Chip
ERHY0000185 RC1005F821CS 820OHM 1% 1/16W 1005 R/TP -
SAMSUNG ELECTRO-MECHANICS CO., LTD.
6
C1301
Capacitor,Ceramic,
Chip
ECCH0009104 C0603C0G1H330JT00NN 33pF 5% 50V C0G -
55TO+125C 0603 R/TP - - TDK CORPORATION
6
U7200
IC,Charge Pump
EUSY0344404
RT9393GQW 2.8V to 5V 4.5Vovp 0W WQFN R/TP-
T 14P x1/x1.5/x2, 6 LED_25mA/Per Channel,
2.0x2.0 mm RICHTEK TECHNOLOGY CORP.
6
C3322
Capacitor,Ceramic,
Chip
ECZH0001210
C1005Y5V1A474ZT000F 470nF -20TO+80% 10V
Y5V -30TO+85C 1005 R/TP - TDK KOREA
COOPERATION