LGE Internal Use Only
Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
3. TECHNICAL BRIEF
- 49 -
- Support for any generic external peripheral whose interface timing is the same as that of
asynchronous memories
- SW controllable write protect feature (against user mode writes)
- NAND controller change to allow a software programmable command that can be issued to the
NAND device.
- Support for an EBI2 pin interface for either 1.8 V or 2.6 V pad power supply voltage
- EBI2 boot-up from a 16-bit non-multiplexed NOR interface type device with special support added
to handle the latency associated with fetching the first page from a NAND device.
■
512Mb NAND flash 512Mb SDRAM (1die)
Interface Spec
Device
Part Name
Maker
Read Access Time
Write Access Time
FLASH
TYA000BC00DOGG
Toshiba
35 ns/Bytes
50 ns/Bytes
SDRAM
TYA000BC00DOGG
Toshiba
107 ns/4Double Word 53 ns/4Double Word
Table. External memory interface for KT610
Summary of Contents for KT610
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