
Rev. 1.10
16
March 02, 2020
Rev. 1.10
17
March 02, 2020
BS83A02L/BS83B04L
Ultra-Low Power Touch Key Flash MCU
BS83A02L/BS83B04L
Ultra-Low Power Touch Key Flash MCU
Memory Characteristics
Ta=-40°C~85°C, unless otherwise specify
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V
DD
Conditions
V
RW
V
DD
for Read / Write
—
—
V
DDmin
—
V
DDmax
V
Flash Program / EEPROM Memory (EEPROM is used for BS83B04L only)
t
DEW
Erase / Write Cycle Time – Flash Program
Memory
—
—
—
2
3
ms
Write Cycle Time – Data EEPROM Memory —
—
—
4
6
I
DDPGM
Programming / Erase current on V
DD
—
—
—
—
5.0
mA
E
P
Cell Endurance – Flash Program Memory
—
—
10K
—
—
E/W
Cell Endurance – Data EEPROM Memory
—
—
100K
—
—
t
RETD
ROM Data Retention time
— Ta=25°C
—
40
—
Year
RAM Data Memory
V
DR
RAM Data Retention Voltage
— Device in SLEEP Mode
1.0
—
—
V
LVR Electrical Characteristics
Ta=-40°C~85°C
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V
DD
Conditions
V
LVR
Low Voltage Reset Voltage
— LVR enable, voltage is 1.7V
-5%
1.7
+5%
V
I
LVR
Operating Current
3V
LVR enable, V
LVR
=1.7V
—
—
15
μA
5V
—
15
25
t
LVR
Minimum Low Voltage Width to Reset
—
—
125
750
1875
μs
Power-on Reset Characteristics
Ta=-40°C~85°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
V
POR
V
DD
Start Voltage to Ensure Power-on Reset
—
—
—
—
100
mV
RR
POR
V
DD
Rising Rate to Ensure Power-on Reset
—
—
0.035
—
—
V/ms
t
POR
Minimum Time for V
DD
Stays at V
POR
to Ensure
Power-on Reset
—
—
1
—
—
ms
V
DD
t
POR
RR
POR
V
POR
Time