This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.2 / July 2004
2
HY57V643220D(L/S)T(P) Series
4Banks x 512K x 32bits Synchronous DRAM
DESCRIPTION
The Hynix HY57V643220D(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory
applications which require wide data I/O and high bandwidth. HY57V643220D(L/S)T(P) is organized as 4banks of
524,228x32.
HY57V643220D(L/S)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs
and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve
very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(se-
quential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or
can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not re-
stricted by a '2N' rule)
FEATURES
ORDERING INFORMATION
Note
1. HY57V643220DT(P) Series : Normal Power
2. HY57V643220DLT(P) Series : Low Power
3. HY57V643220DST(P) Series : Super Low Power
4. HY57V643220D(L/S)T Series : Leaded
5. HY57V643220D(L/S)TP Series : Lead Free
Part No.
Clock
Frequency
Organization
Interface
Package
HY57V643220D(L/S)T(P)-45
222MHz
4Banks x 512Kbits
x32
LVTTL
86pin TSOP-II
(Lead Free)
HY57V643220D(L/S)T(P)-5
200MHz
HY57V643220D(L/S)T(P)-55
183MHz
HY57V643220D(L/S)T(P)-6
166MHz
HY57V643220D(L/S)T(P)-7
143MHz
•
Voltage : VDD, VDDQ 3.3V supply voltage
•
All device pins are compatible with LVTTL interface
•
JEDEC standard 400mil 86pin TSOP-II with 0.5mm of
pin pitch
•
All inputs and outputs referenced to positive edge of
system clock
•
Data mask function by DQM 0, 1, 2 and DQM 3
•
Internal four banks operation
•
Auto refresh and self refresh
•
4096 Refresh cycles / 64ms
•
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
•
Programmable CAS Latency ; 2, 3 Clocks
•
Burst Read Single Write operation
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