Harman Kardon AVR 151/230C, Service Manual

Page: 44 / 131

〈 Transistor 〉
ＲＴ１Ｎ１４４Ｘ
SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
ISAHAYA ELECTRONICS CORPORATION
MAXIMUM RATING (Ta=25 ℃ )
RATING
SYMBOL PARAMETER
RT1N144T2 RT1N144U RT1N144M RT1N144C RT1N144S
UNIT
Ｖ
ＣＢＯ
Collector to Base voltage 50 V
Ｖ
ＥＢＯ
Emitter to Base voltage 6 V
Ｖ
ＣＥＯ
Collector to Emitter voltage 50 V
Ｉ
Ｃ
Collector current 100 mA
Ｉ
ＣＭ
Peak Collector current 200 mA
Ｐ
Ｃ
Collector dissipation(Ta=25 ℃ ) 125 （※） 150 200 450 mW
Ｔｊ Junction temperature +125 +150 ℃
Ｔｓｔ ｇ Storage temperature -55 〜 +125 -55 〜 +150 ℃
（※） package mounted on 9mm × 19mm × 1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25 ℃ )
LIMIT
SYMBOL PARAMETER TEST CONDITION
MIN TYP MAX
UNIT
Ｖ
（ＢＲ）ＣＥＯ
C to E break down voltage I
C
=100
μ
A
，
R
BE
=
∞
50 V
Ｉ
ＣＢＯ
Collector cut off current V
CB
=50V ， I
E
=0 0.1 μ A
ｈ
ＦＥ
DC forward current gain V
CE
=5V ， I
C
=5mA 50 −
Ｖ
ＣＥ（ｓａｔ ）
C to E saturation voltage I
C
=10mA
，
I
B
=0.5mA 0.1 0.3 V
Ｖ
Ｉ （ＯＮ）
Input on voltage V
CE
=0.2V ， I
C
=5mA 1.0 1.8 V
Ｖ
Ｉ （ＯＦＦ）
Input off voltage V
CE
=5V ， I
C
=100 μ A 0.4 0.7 V
Ｒ
１
Input resistance 7.0 10 13 k Ω
Ｒ
２
／Ｒ
１
Resistance ratio 4.2 4.7 5.1
ｆ
Ｔ
Gain band width product V
CE
=6V ， I
E
=-10mA 200 MHz
COLLECTOR DISSIPATION
VS AMBIENT TEMPERTURE
0
100
200
300
400
500
600
0 25 50 75 100 125 150 175
AMBIENT TEMPERTURE Ta (
℃
)
COLLECTOR DISSIPATION Pc (mW)
RT1N144T2
RT1N144U
RT1N144C
RT1N144M
RT1N144S
Harman Kardon AVR 151 Service Manual
Page 44 of 131