HSBT3031-08 module_datasheet
Version2.0– Jun. 15
th
HANSONG ( NANJING) TECHNOLOGY CO.,LTD
24
Standby mode
Min
Type
Max
Unit
VFAST threshold (rising)
Configured by application
software
0
1.8%
(75 mV at
4.2 V)
2.4%
(100 mV at
4.2 V)
3.0%
(125 mV at
4.2 V)
%
1
3.0%
(125 mV at
4.2V)
3.6%
(150 mV at
4.2 V)
4.2%
(175 mV at
4.2 V)
%
2
4.2%
(175 mV at
4.2 V)
4.8%
(200 mV at
4.2 V)
5.4%
(225 mV at
4.2 V)
%
3
5.4%
(225 mV at
4.2 V)
6.0%
(250 mV at
4.2 V)
6.5%
(275 mV at
4.2 V)
%
Charger headroom error mode
MIn
Typ
Max
Unit
Headroom error threshold (falling)
30
65
100
mV
Headroom error threshold (rising)
95
140
170
mV
Charger Vbat overvoltage mode
MIn
Typ
Max
Unit
Overvoltage (rising)
4.65
4.7
4.75
V
Headroom error hysteresis
-
100
-
mV
Headroom error threshold (falling)
4.55
4.6
4.65
V
Charger with external transistor mode
MIn
Typ
Max
Unit
External fast charge current, IFAST
0.2
-
1.8
A
External pass device hfe
45
120
700
-
Charger with external transistor mode
accuracy
a
max
-
The accuracy is the sum of the
following:
■
±
3.5% of current corresponding
to 100 mV drop across the external
sense resistor
b
■
±
accuracy of the external sense
resistor and PCB trace resistance
between VDD_BYP_CHG and the
external sense resistor
■
–
% charge current reduction
due to base current of the external
pass transistor given by 1/(hfe + 1)
■
+ % charge current increase
