GSWP100W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
User’s Guide
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GSWP100W-EVBPA Rev 180529
© 2018 GaN Systems Inc.
www.gansystems.com 21
Please refer to the Evaluation Board/Kit Important Notice on page 26
power transfer. Secondly, the bottom-side cooled GaN
PX
® packaging provides an extremely low
thermal impedance for efficient heat transfer to the heatsink, thereby drawing heat out of the device.
This GaN based design is able to operate over a wide ambient temperature and with convection cooling,
eliminating the need for cooling fans. These advantages support a PA design with excellent thermal
performance up to 100W output power.
The temperature plot of the PA design was measured and captured with a SEEK thermal camera and is
shown in Figure 21.
The hottest devices are the first inductors, with the hottest inductor recording 35˚C
above ambient. The temperature rise of the GaN E-
HEMTs, by comparison, is only 3˚C. Because the
GaN E-HEMTs run very cool, this allows operation over a very wide temperature range and extends
operation to a higher power level while simultaneously simplifying the cooling system design and
reducing the cost.
Figure 21 •
Thermal measurement of PA without EMI filter at 100W output power
