GS66504B-EVBDB 650V
GaN E-HEMT Evaluation Board
User’s Guide
_____________________________________________________________________________________________________________________
GS66504B-EVBDB UG rev. 161120
© 2016 GaN Systems Inc.
www.gansystems.com 9
Please refer to the Evaluation Board/Kit Important Notice on page 29
Figure 10 PWM control input and dead time circuit
Figure 11 On board dead time generatrion circuit
The top and bottom switches PWM inputs can be individually controlled by two jumpers J4 and J6. Users
can choose between a pair of complementary on-board internal PWM signals (non-inverted and inverted,
controlled by J7 input) with dead time or external high/low side drive signals from J5 (users’ own control
board).
An on-board dead time generation circuit is included on the mother board. Dead time is controlled by
two RC delay circuits, R6/C12 and R5/C11. The default dead time is set to about 100ns. Additionally two
potentiometers locations are provided (TR1/TR2, not included) to allow fine adjustment of the dead time
if needed.
0V
D1 PMEG2005EB
SOD523
R6
1K00
TR1
2K
C11
100pF
0V
R5
1K00
C10
1uF
C9
0.1uF
+5V
J7
112538
1
2
3
4
5
R4
100R
R1206
R2
100R
R1206
U2A
74VHC132
3
1
2
14
7
0V
R1
49R9
0V
D2 PMEG2005EB
SOD523
TR2
2K
C12
100pF
0V
U2B
74VHC132
4
5
6
U2C
74VHC132
9
10
8
U2D
74VHC132
12
13
11
TP7
TP8
DNP
DNP
PWM
OUTPUT
INVERTED
PWM OUTPUT
R3
49R9
DNP
DNP
R7
49R9
