MB3891
10
(Ta
=
+
25
°
C, VBAT1 to VBAT4
=
VCC-VSIM
=
3.6 V)
(Continued)
Parameter
Symbol Pin No.
Conditions
Value
Unit
Min.
Typ.
Max.
LDO6
(V-BACKUP)
Output voltage
V
O
21
−
10
µ
A
>
V-BACKUP
>
−
250
µ
A
2.000 2.100 2.200
V
Line regulation
Line
21
3.1 V < VBAT2 < 5.5 V
10
mV
Load regulation
Load
21
−
10
µ
A
>
V-BACKUP
>
−
250
µ
A
30
mV
Ripple rejection
∆
VBAT2/
∆
V-BACKUP
R.R
21
f
=
217 Hz
25
dB
GND current at
low load
I
GND
19
V-BACKUP
>
−
10
µ
A
10
µ
A
GND current at
max. load
I
GND
19
V-BACKUP
=
−
250
µ
A
50
µ
A
Output noise volt.
(RMS)
V
NOVL
21
f
=
10 Hz to 1 MHz,
V-BACKUP
=
1
µ
F
500
µ
V
Reverse current
I
RC
21
VBAT2
=
0 V,
V-BACKUP
=
3.0 V
100
nA
REF-OUT
Output voltage
V
O
24
0
µ
A
>
REF-OUT
>
−
50
µ
A
1.200 1.225 1.250
V
Line regulation
Line
24
3.1 V < VBAT2 < 5.5 V
10
mV
Load regulation
Load
24
0
µ
A
>
REF-OUT
>
−
50
µ
A
6
mV
Ripple rejection
∆
VBAT2/
∆
REF-OUT
R.R
24
f
=
217 Hz
50
dB
Output noise volt.
(RMS)
V
NOVL
24
f
=
10 Hz to 1 MHz,
REF-OUT
=
27 nF
250
µ
V
VSIMOUT
chargepump
Output voltage
V
O
29
−
50
µ
A
>
VSIMOUT
>
−
10 mA,
SIMPROG
=
“H”
4.600 5.000 5.400
V
V
O
29
−
50
µ
A
>
VSIMOUT
>
−
10 mA,
SIMPROG
=
“L”
2.760 3.000 3.240
V
Line regulation
Line
29
3.1 V < VCC-VSIM < 5.5 V
50
mV
Load regulation
Load
29
−
50
µ
A
>
VSIMOUT
>
−
10 mA
100
mV