Fairchild FSB44104A User Manual Download Page 19

AN-9111 

APPLICATION NOTE 

© 2015 Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

Rev. 1.1  

•  6/26/15 

18 

0

2

4

6

8

10

12

14

16

18

20

0

10

20

30

40

50

60

70

80

90

100

110

6.8[

F]

Continuous Sinusoidal Current Control

10[

F]

22[

F]

33[

F]

47[

F]

100[

F]

C

BS_min

=(I

Leak

*

t)/

V

BS

Conditions : 

V

BS

=0.1 [V], I

Leak

=4.5 [mA]

 

Minimum Value

 Recommend Value
 Commercial Capacitance

Boo

tstrap

 C

apacita

n

ce

, C

BS

 [

F

]

Switching Frequency, F

SW

 [kHz]

 

Figure 23. 

Capacitance of Bootstrap Capacitor on 

Variation of Switching Frequency 

Based on switching frequency and recommended ΔV

BS 

 

I

Leak

: circuit current = 10 mA  

 

ΔV

BS

: discharged voltage = 2.0 V (recommended value) 

 

Δt: maximum on pulse width of high-side MOSFET = 
2 ms (depends on user system) 

 

       

   

 

    

   

  

  

 

        

    

         

  

  

 More than 2~3 times 

 20~30 μF. 

 S

tandard nominal capacitance 22 ~ 35 

μ

 
 

 

6.4.4.

 

Selection of Bootstrap Resistor Considering 
Operating 

A resistor  must be added in series  with  the bootstrap diode 
to slow down the dV

BS

/dt and determine the time to charge 

the bootstrap capacitor. If the  minimum ON pulse  width of 
low-side  MOSFET  or  the  minimum  OFF  pulse  width  of 
high-side  MOSFET  is  t

O

;  the  bootstrap  capacitor  must  be 

charged  to  increase  the  voltage  by  ΔV  during  this  period. 

Therefore,  the  value  of  bootstrap  resistance  can  be 
calculated by: 

BS

ΔV

)

(

BS

o

BS

CC

BS

C

t

V

V

R

 

where: 

V

CC

 = Supply voltage; 

V

BS

 = Minimum bootstrap voltage; 

t

O

 = Minimum ON pulse width; 

C

BS

 = Bootstrap capacitor value; and 

ΔV

BS

 = Ripple voltage of V

BS

Calculation Examples of R

BS

:

 

V

CC

 = 15 V, V

BS

 = 13 V (minimum voltage) 

t

O

 = 200 µs (if carrier frequency is 5 kHz, 1-cylce is 200 µs) 

C

BS

 = 20 µF (obtained bootstrap capacitor value) 

ΔV

BS

 = 2 V (recommended value) 

10

2

20

200

13

15

ΔV

)

(

BS

V

F

s

V

C

t

V

V

R

BS

o

BS

CC

BS

 

If  the  rising  dV

BS

/dt  is  slowed  significantly,  it  could  cause 

missing  pulses  during  the  startup  phase  due  to  insufficient 
V

BS

 voltage. 

Note:  

18.  The capacitance value can be changed according to the 

switching  frequency,  the  capacitor  selected,  and  the 
recommended  V

BS

  voltage  of  13.0~18.5 V  (from 

datasheet).  The  above  result  is  just  a  calculation 
example.  This  value  can  be  changed  according  to  the 
actual control method and lifetime of the component. 

 

 
 

 
 
 
 
 
 
 

 

 

Summary of Contents for FSB44104A

Page 1: ...y ON Semiconductor Typical parameters which may be provided in ON Semiconductor data sheets and or specifications can and do vary in different applications and actual performance may vary over time Al...

Page 2: ...Outline 7 3 4 Marking Specification 8 4 Product Synopsis 9 4 2 Electrical Characteristic TJ 25 o C unless otherwise specified 10 4 3 Recommended Operating Conditions 12 4 4 Mechanical Characteristics...

Page 3: ...based power module has much better ruggedness and a larger Safe Operation Area SOA than MOSFET based module or Silicon On Insulator modules The FRFET based power module has a big advantage in light l...

Page 4: ...ine up Table 1 shows the basic line up Online loss temperature simulation tool Motion Control Design Tool Motion Control Design Tool is recommended to find out the right SPM product for the desired ap...

Page 5: ...the accomplishment of optimization package size while maintaining outstanding heat dissipation characteristics without compromising the isolation rating In the SPM package technology was developed in...

Page 6: ...NV Negative DC Link Input 7 NU Negative DC Link Input 8 VFO Fault Output 9 IN UL PWM Input for Low Side U Phase MOSFET Drive 10 IN VL PWM Input for Low Side V Phase MOSFET Drive 11 IN WL PWM Input for...

Page 7: ...built in MOSFETs They are activated by voltage input signals The terminals are internally connected to a Schmitt trigger circuit composed of 5 V class CMOS The signal logic of these pins is active HI...

Page 8: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 7 3 3 Package Outline...

Page 9: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 8 3 4 Marking Specification...

Page 10: ...calculation value or design factor Table 4 Control Part Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied between VCC COM 20 V VBS High Side Control Bias Voltage Applied betwe...

Page 11: ...VBS 15 V VIN 5 V ID 40 A 3 0 4 1 m VSD Source Drain Diode Forward Voltage VCC VBS 15 V VIN 0 V ISD 40 A 0 8 1 1 V HS tON Switching Times VPN 20 V VCC VBS 15 V ID 40 A VIN 0 V 5 V Inductive Load See Fi...

Page 12: ...8 Control Part Symbol Parameter Conditions Min Typ Max Unit IQCC Quiescent VCC Supply Current VCC H 15 V IN UH VH WH 0 V VCC H COM 2 75 mA IQBS Quiescent VBS Supply Current VBS 15 V IN UH VH WH 0 V VB...

Page 13: ...WH COM VCC L COM 13 5 15 0 16 5 VBS High Side Bias Voltage Applied between VB U VS U VB V VS V VB W VS W 13 0 15 0 18 5 V dVCC dt dVBS dt Control Supply Variation 1 1 V s VSEN Voltage for Current Sen...

Page 14: ...and carrying current The HVIC has an under voltage lockout function to protect the high side MOSFET from insufficient gate driving voltage A timing chart for this protection is shown in Figure 11 A f...

Page 15: ...03 V max 0 033 V Tolerance 10 depends on system Shunt resistance ISC max VSC max RSHUNT min RSHUNT min VSC max ISC max If the deviation of the shunt resistor is limited below 1 RSHUNT typ RSHUNT min...

Page 16: ...max 60 A and VREF level is 2 5 V To prevent malfunction it is recommended that an RC filter be inserted at the CSC pin To shut down MOSFETs within 3 s when over current situation occurs a time constan...

Page 17: ...e HVIC does not drive the high side MOSFET if the VBS voltage drops below a specified voltage refer to the datasheet This function prevents the MOSFET from operating in a high dissipation mode There a...

Page 18: ...21 and Figure 22 shows waveform initial bootstrap capacitor charging voltage and current Figure 21 Each Part Initial Operating Waveform of Bootstrap Circuit Conditions VDC 20 V VCC 15 V CBS 22 F LS M...

Page 19: ...ootstrap capacitor If the minimum ON pulse width of low side MOSFET or the minimum OFF pulse width of high side MOSFET is tO the bootstrap capacitor must be charged to increase the voltage by V during...

Page 20: ...BS CSP15 5V RPF Motor VDC CDCS Gating UH Gating VH Gating WL Gating VL Gating UL CPF M C U RSH Current Sensing RS RS RS RS RS RS RBS DBS RBS DBS LVIC VFO VCC IN UL IN VL IN WL COM OUT UL OUT VL OUT WL...

Page 21: ...D and Power GND as short as possible Place sunbber capacitor between P and N and closely to terminals Isolation distance between high voltage block and low voltage block should be kept The V IN RC fil...

Page 22: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 21 Packing Information Figure 26 Packing Information...

Page 23: ...LICY FAIR HI D PRODU T ARE NOT AUTHORIZED FOR U E A RITI A OMPONENT IN IFE UPPORT DEVI E OR Y TEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION As used h...

Page 24: ...the rights of others ON Semiconductor products are not designed intended or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices wit...

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