Fairchild FSB43004A, User Manual

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AN-9111 APPLICATION NOTE
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.1
• 6/26/15
9
4. Product Synopsis
This section discuss electrical specification, characteristics and mechanical characteristics
4.1. Absolute Maximum Ratings (T
J
= 25°C, unless otherwise specified).
Table 3.
Inverter Part
Symbol Parameter Conditions Rating Unit
V
PN
Supply Voltage Applied between P
–N
U
, N
V
,N
W
40 V
* ±I
D
(2)
Each MOSFET Drain Current T
C
=25°C, T
J

150°C
FSB44104A 57
A
FSB43004A 71
* ±I
CP
(2)
Each MOSFET Drain Current
(Peak)
T
C
=25°C, T
J

150°C, Under
1 ms Pulse Width
FSB44104A 110
A
FSB43004A 180
* P
D
(2)
Maximum Power Dissipation
T
C
=25°C, per One Chip,
T
J
=150°C
FSB44104A 28
W
FSB43004A 31
T
J
Operating Junction Temperature -40 ~ 150
o
C
Note:
2.
Rating value of marking “*” is calculation value or design factor.
Table 4. Control Part
Symbol Parameter Conditions Rating Unit
V
CC
Control Supply Voltage Applied between V
CC
- COM 20 V
V
BS
High-Side Control Bias Voltage
Applied between V
B(U)
- V
S(U)
,V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
,
20 V
V
IN
Input Signal Voltage
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
,
IN
(VL)
, IN
(WL)
, - COM
-0.3~V
CC
+0.3 V
V
FO
Fault Output Supply Voltage Applied between V
FO
– COM
-0.3~V
CC
+0.3 V
I
FO
Fault Output Current Sink Current at V
FO
Pin 1 mA
Table 5. Total System
Symbol Parameter Conditions Rating Unit
T
C
Module Case Operation
Temperature
See Figure 6 -40~125 °C
T
STG
Storage Temperature -40~150 °C
V
ISO
Isolation Voltage
60 Hz, Sinusoidal, 1-Minute, Connect Pins to
Heat Sink
800 V
rms
Table 6. Thermal Resistance
Symbol Parameter Conditions Max. Unit
R
th(j-c)
Junction-to-Case Thermal
Resistance
(3)
Package center (per MOSFET)
FSB44104A 4.41
°C /W
FSB43004A 3.92
Note:
3. For the measurement point of case temperature (T
C
), please refer to Figure 6.