ESMT F25L04PA Series, Manual

Page: 14 / 33

ESMT
F25L04PA (2D)
Elite Semiconductor Memory Technology Inc.
Publication D ate: Aug. 2012
Revision: 1.4 14/33
64K Byte Block Erase
The 64K-byte Block Erase instruction clears all bits in the
selected block to FFH. A Block Erase instruction applied to a
protected memory area will be ignored. Prior to any Write
operation, the Write Enable (WREN) instruction must be
executed. CE must remain active low for the duration of the any
command sequence. The Block Erase instruction is initiated by
executing an 8-bit command, D8H, followed by address bits [A
23
-A
0
]. Address bits [A
MS
-A
16
] (A
MS
= Most Significant address) are
used to determine the block address (BA
X
), remaining address
bits can be V
IL
or V
IH
. CE must be driven high before the
instruction is executed. The user may poll the Busy bit in the
Software Status Register or wait T
BE
for the completion of the
internal self-timed Block Erase cycle. See Figure 8 for the Block
Erase sequence.
Figure 8: 64K-byte Block Erase Sequence
4K Byte Sector Erase
The Sector Erase instruction clears all bits in the selected sector
to FFH. A Sector Erase instruction applied to a protected memory
area will be ignored. Prior to any Write operation, the Write
Enable (WREN) instruction must be executed. CE must remain
active low for the duration of the any command sequence. The
Sector Erase instruction is initiated by executing an 8-bit
command, 20H, followed by address bits [A
23
-A
0
]. Address bits
[A
MS
-A
12
] (A
MS
= Most Significant address) are used to determine
the sector address (SA
X
), remaining address bits can be V
IL
or
V
IH
. CE must be driven high before the instruction is executed.
The user may poll the Busy bit in the Software Status Register or
wait T
SE
for the completion of the internal self-timed Sector Erase
cycle. See Figure 9 for the Sector Erase sequence.
CE
SCK
SI
0 1 2 3 4 5 6 7 8
15 16 23 24 31
MSB
MSB
HIGH IMPENANCE
SO
20 ADD. ADD. ADD.
MODE3
MODE0
Figure 9: 4K-byte Sector Erase Sequence