Daewoo DG-K301, Service Manual

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CIRCUIT OPERATIONAL DESCRIPTION
2) Flash Memory : ES29LV800DB-70TG
Description
The ES29LV800 is a 8 megabit, 3.0 volt-only flash memory device, organized as M
x 8 bits (Byte mode) or 52K x 6 bits (Word mode) which is configurable by BYTE#.
Four boot sectors and fifteen main sectors are provided : 6Kbytes x , 8Kbytes x 2,
32Kbytes x and 64Kbytes x 5. The device is manufactured with ESI’s proprietary,
high performance and highly reliable 0.8um CMOS flash technology. The device can
be programmed or erased in-system with standard 3.0 Volt Vcc supply ( 2.7V-3.6V) and
can also be programmed in standard EPROM programmers. The device offers minimum
endurance of 00,000 program/erase cycles and more than 0 years of data retention.
The ES29LV800 offers access time as fast as 70ns or 90ns, allowing operation of high-
speed microprocessors without wait states. Three separate control pins are provided to
eliminate bus contention : chip enable (CE#), write enable (WE#) and output enable
(OE#).
All program and erase operation are automatically and internally performed and con-
trolled by embedded program/erase algorithms built in the device. The device automati-
cally generates and times the necessary high-voltage pulses to be applied to the cells,
performs the verification, and counts the number of sequences. Some status bits (DQ7,
DQ6 and DQ5) read by data# polling or toggling between consecutive read cycles pro-
vide to the users the internal status of program/erase operation: whether it is success-
fully done or still being progressed.
The ES29LV800 is completely compatible with the JEDEC standard command set of sin-
gle power supply Flash. Commands are written to the internal command register using
standard write timings of microprocessor and data can be read out from the cell array
in the device with the same way as used in other EPROM or flash devices.