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CY62256

Document #: 38-05248 Rev. *B

Page 4 of 11

 

Switching Characteristics 

Over the Operating Range

[6]

 

Parameter

Description

CY62256

55

CY62256

70

Unit

Min.

Max.

Min.

Max.

Read Cycle

t

RC

Read Cycle Time

55

70

ns

t

AA

Address to Data Valid

55

70

ns

t

OHA

Data Hold from Address Change

5

5

ns

t

ACE

CE LOW to Data Valid

55

70

ns

t

DOE

OE LOW to Data Valid

25

35

ns

t

LZOE

OE LOW to Low-Z

[7]

5

5

ns

t

HZOE

OE HIGH to High-Z

[7, 8]

20

25

ns

t

LZCE

CE LOW to Low-Z

[7]

5

5

ns

t

HZCE

CE HIGH to High-Z

[7, 8]

20

25

ns

t

PU

CE LOW to Power-up

0

0

ns

t

PD

CE HIGH to Power-down

55

70

ns

Write Cycle

[9, 10]

t

WC

Write Cycle Time

55

70

ns

t

SCE

CE LOW to Write End

45

60

ns

t

AW

Address Set-up to Write End

45

60

ns

t

HA

Address Hold from Write End

0

0

ns

t

SA

Address Set-up to Write Start

0

0

ns

t

PWE

WE Pulse Width

40

50

ns

t

SD

Data Set-up to Write End

25

30

ns

t

HD

Data Hold from Write End

0

0

ns

t

HZWE

WE LOW to High-Z

[7, 8]

20

25

ns

t

LZWE

WE HIGH to Low-Z

[7]

5

5

ns

Switching Waveforms 

Notes:

6.

Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified 
I

OL

/I

OH

 and 100-pF load capacitance.

7.

At any given temperature and voltage condition, t

HZCE

 is less than t

LZCE

, t

HZOE

 is less than t

LZOE

, and t

HZWE

 is less than t

LZWE

 for any given device.

8.

t

HZOE

, t

HZCE

, and t

HZWE

 are specified with C

L

 = 5 pF as in (b) of AC Test Loads. Transition is measured 

±

500 mV from steady-state voltage.

9.

The internal Write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a Write and either signal can terminate 
a Write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the Write.

10. The minimum Write cycle time for Write cycle #3 (WE controlled, OE LOW) is the sum of t

HZWE

 and t

SD

11. Device is continuously selected. OE, CE = V

IL

.

12. WE is HIGH for Read cycle.

ADDRESS

DATA OUT

PREVIOUS DATA VALID

DATA VALID

t

RC

t

AA

t

OHA

Read Cycle No. 1 

[11, 12]

Summary of Contents for 256K (32K x 8) CY62256

Page 1: ...eature reducing the power consumption by 99 9 when deselected An active LOW write enable signal WE controls the writing reading operation of the memory When CE and WE inputs are both LOW data on the eight data input output pins I O0 through I O7 is written into the memory location addressed by the address present on the address pins A0 through A14 Reading the device is accomplished by selecting th...

Page 2: ...ew not to scale 1 2 3 4 5 6 7 8 9 10 11 14 15 16 20 19 18 17 21 24 23 22 Top View DIP 12 13 25 28 27 26 GND A6 A7 A8 A9 A10 A11 A12 A13 WE VCC A4 A3 A2 A1 I O7 I O6 I O5 I O4 A14 A5 I O0 I O1 I O2 CE OE A0 I O3 Operating Range Range Ambient Temperature VCC Commercial 0 C to 70 C 5V 10 Industrial 40 C to 85 C 5V 10 Electrical Characteristics Over the Operating Range Parameter Description Test Condi...

Page 3: ...orms Data Retention Characteristics Parameter Description Conditions 5 Min Typ 3 Max Unit VDR VCC for Data Retention 2 0 V ICCDR Data Retention Current L VCC 3 0V CE VCC 0 3V VIN VCC 0 3V or VIN 0 3V 2 50 µA LL 0 1 5 µA LL Ind l 0 1 10 µA tCDR 4 Chip Deselect to Data Retention Time 0 ns tR 4 Operation Recovery Time tRC ns Data Retention Waveform Notes 4 Tested initially and after any design or pro...

Page 4: ... ns tLZWE WE HIGH to Low Z 7 5 5 ns Switching Waveforms Notes 6 Test conditions assume signal transition time of 5 ns or less timing reference levels of 1 5V input pulse levels of 0 to 3 0V and output loading of the specified IOL IOH and 100 pF load capacitance 7 At any given temperature and voltage condition tHZCE is less than tLZCE tHZOE is less than tLZOE and tHZWE is less than tLZWE for any gi...

Page 5: ...h impedance state Switching Waveforms continued 50 50 DATA VALID tRC tACE tDOE tLZOE tLZCE tPU DATA OUT HIGH IMPEDANCE IMPEDANCE ICC ISB tHZOE tHZCE tPD OE CE HIGH VCC SUPPLY CURRENT Read Cycle No 2 12 13 tHD tSD tPWE tSA tHA tAW tWC DATA I O ADDRESS CE WE OE tHZOE DATAIN VALID NOTE Write Cycle No 1 WE Controlled 9 14 15 16 tWC tAW tSA tHA tHD tSD tSCE WE DATA I O ADDRESS CE DATAIN VALID Write Cyc...

Page 6: ...ote 16 During this period the I Os are in output state and input signals should not be applied Switching Waveforms continued DATA I O ADDRESS tHD tSD tLZWE tSA tHA tAW tWC CE WE tHZWE DATAIN VALID Write Cycle No 3 WE Controlled OE LOW 10 15 NOTE 16 ...

Page 7: ...URE AMBIENT TEMPERATURE C OUTPUT VOLTAGE V OUTPUT SOURCE CURRENT vs OUTPUT VOLTAGE 0 0 0 8 1 4 1 1 1 0 0 9 4 0 4 5 5 0 5 5 6 0 NORMALIZED t SUPPLY VOLTAGE V NORMALIZED ACCESS TIME vs SUPPLY VOLTAGE 120 140 100 60 40 20 0 0 1 0 2 0 3 0 4 0 OUTPUT SINK CURRENT mA 0 80 OUTPUT VOLTAGE V OUTPUT SINK CURRENT vs OUTPUT VOLTAGE 0 6 0 4 0 2 0 0 NORMALIZED I CC NORMALIZED I I CC SB ICC ICC VCC 5 0V VCC 5 0V...

Page 8: ...Power down Standby ISB L H L Data Out Read Active ICC L L X Data In Write Active ICC L H H High Z Deselect Output Disabled Active ICC Ordering Information Speed ns Ordering Code Package Name Package Type Operating Range 55 CY62256LL 55SNI SN28 28 lead 300 Mil Narrow Body Narrow SOIC Industrial CY62256LL 55ZI Z28 28 lead Thin Small Outline Package 70 CY62256 70SNC SN28 28 lead 300 Mil Narrow Body N...

Page 9: ...CY62256 Document 38 05248 Rev B Page 9 of 11 Package Diagrams 51 85017 A 28 lead 600 mil Molded DIP P15 51 85092 B 28 lead 300 mil SNC Narrow Body SN28 ...

Page 10: ... as critical components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress Semiconductor products in life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges All product and company names mention...

Page 11: ...N NO Issue Date Orig of Change Description of Change 113454 03 06 02 MGN Change from Spec number 38 00455 to 38 05248 Remove obsolete parts from ordering info standardize format A 115227 05 23 02 GBI Changed SN Package Diagram B 116506 09 04 02 GBI Added footnote 1 Corrected package description in Ordering Information table ...

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