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Document Number: 001-50595 Rev. **

Revised January 29, 2009

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STK16C88

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Document Title: STK16C88 256 Kbit (32K x 8) Au nvSRAM 
Document Number: 001-50595

Rev.

ECN No.

Orig. of 

Change

Submission 

Date

Description of Change

**

2625096

GVCH/PYRS

12/19/08

New data sheet

[+] Feedback 

Summary of Contents for STK16C88

Page 1: ...and Industrial Temperatures 28 pin 600 mil PDIP package RoHS compliance Functional Description The Cypress STK16C88 is a 256 Kb fast static RAM with a nonvolatile element in each memory cell The embedded nonvolatile elements incorporate QuantumTrap technology producing the world s most reliable nonvolatile memory The SRAM provides unlimited read and write cycles while independent nonvolatile data ...

Page 2: ...Input Write Enable Input Active LOW When the chip is enabled and WE is LOW data on the IO pins is written to the specific address location CE E Input Chip Enable Input Active LOW When LOW selects the chip When HIGH deselects the chip OE G Input Output Enable Active LOW The active LOW OE input enables the data output buffers during read cycles Deasserting OE HIGH causes the IO pins to tri state VSS...

Page 3: ...e again exceeds the sense voltage of VSWITCH a RECALL cycle is automatically initiated and takes tHRECALL to complete If the STK16C88 is in a WRITE state at the end of power up RECALL the SRAM data is corrupted To help avoid this situation a 10 Kohm resistor is connected either between WE and system VCC or between CE and system VCC Software STORE Data is transferred from the SRAM to the nonvolatil...

Page 4: ... TTL input levels 5 The operating temperature 6 The VCC level 7 IO loading Figure 3 Current Versus Cycle Time WRITE Best Practices nvSRAM products have been used effectively for over 15 years While ease of use is one of the product s main system values experience gained working with hundreds of applica tions has resulted in the following suggestions as best practices The nonvolatile cells in an nv...

Page 5: ...Output Data Output Data 1 2 L H 0x0E38 0x31C7 0x03E0 0x3C1F 0x303F 0x0C63 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile RECALL Output Data Output Data Output Data Output Data Output Data Output Data 1 2 Notes 1 The six consecutive addresses must be in the order listed WE must be high during all six consecutive CE controlled cycles to enable a nonvolatile cycle 2 While there are 15 ...

Page 6: ...mA mA ICC2 Average VCC Current during STORE All Inputs Do Not Care VCC Max Average current for duration tSTORE 3 mA ICC3 Average VCC Current at tRC 200 ns 5V 25 C Typical WE VCC 0 2V All other inputs cycling Dependent on output loading and cycle rate Values obtained without output loads 10 mA ISB1 3 Average VCC Current Standby Cycling TTL Input Levels tRC 25ns CE VIH tRC 45ns CE VIH Commercial 30 ...

Page 7: ... are listed 4 Parameter Description Test Conditions 28 PDIP Unit ΘJA Thermal Resistance Junction to Ambient Test conditions follow standard test methods and proce dures for measuring thermal impedance per EIA JESD51 TBD C W ΘJC Thermal Resistance Junction to Case TBD C W Figure 4 AC Test Loads AC Test Conditions 5 0V Output 30 pF R1 480Ω R2 255Ω Input Pulse Levels 0 V to 3 V Input Rise and Fall Ti...

Page 8: ...QZ Chip Disable to Output Inactive 10 15 ns tLZOE 7 tGLQX Output Enable to Output Active 0 0 ns tHZOE 7 tGHQZ Output Disable to Output Inactive 10 15 ns tPU 4 tELICCH Chip Enable to Power Active 0 0 ns tPD 4 tEHICCL Chip Disable to Power Standby 25 45 ns Switching Waveforms Figure 5 SRAM Read Cycle 1 Address Controlled 5 6 Figure 6 SRAM Read Cycle 2 CE and OE Controlled 5 W5 W W2 5 66 4 7 287 7 9 ...

Page 9: ...s Setup to Start of Write 0 0 ns tHA tWHAX tEHAX Address Hold After End of Write 0 0 ns tHZWE 7 8 tWLQZ Write Enable to Output Disable 10 15 ns tLZWE 7 tWHQX Output Active After End of Write 5 5 ns Switching Waveforms Figure 7 SRAM Write Cycle 1 WE Controlled 9 Figure 8 SRAM Write Cycle 2 CE Controlled 9 tWC tSCE tHA tAW tSA tPWE tSD tHD tHZWE tLZWE ADDRESS CE WE DATA IN DATA OUT DATA VALID HIGH I...

Page 10: ...e Slew Time to Ground 500 ns VRESET Low Voltage Reset Level 3 6 V VSWITCH Low Voltage Trigger Level 4 0 4 5 V Switching Waveforms Figure 9 AutoStore Power Up RECALL 9 96 7 95 6 7 32 5 83 5 4 7 287 XWR6WRUH 9 W 5 WVWJ W6725 52 1 287 XWR6WRUH3OXVH 12 5 9 127 2 2 95 6 7 52 1 287 XWR6WRUH3OXVH 5 1 9 5 78516 29 96 7 32 5 83 5 52 1 287 12 6725 8 72 12 65 0 5 7 6 12 5 9 127 2 2 95 6 7 Notes 10 tHRECALL s...

Page 11: ...11 tELAX Address Hold Time 20 20 ns tRECALL RECALL Duration 20 20 μs Switching Waveforms Figure 10 CE Controlled Software STORE RECALL Cycle 12 tRC tRC tSA tSCE tHACE tSTORE tRECALL DATA VALID DATA VALID 6 S S E R D D A 1 S S E R D D A HIGH IMPEDANCE ADDRESS CE OE DQ DATA Notes 11 The software sequence is clocked on the falling edge of CE without involving OE double clocking aborts the sequence 12...

Page 12: ... 28 pin PDIP Commercial STK16C88 WF45I 51 85017 28 pin PDIP Industrial All parts are Pb free The above table contains Final information Please contact your local Cypress sales representative for availability of these parts Speed 25 25 ns 45 45 ns Package W Plastic 28 pin 600 mil DIP Part Numbering Nomenclature Commercial and Industrial STK16C88 W F 45 I Temperature Range Blank Commercial 0 to 70 C...

Page 13: ...STK16C88 Document Number 001 50595 Rev Page 13 of 14 Package Diagrams Figure 11 28 Pin 600 Mil PDIP 51 85017 51 85127 A 51 85017 B Feedback ...

Page 14: ...as specified in the applicable agreement Any reproduction modification translation compilation or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND EXPRESS OR IMPLIED WITH REGARD TO THIS MATERIAL INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNE...

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