STK14C88-3
Document Number: 001-50592 Rev. **
Page 5 of 17
Software RECALL
Data is transferred from the nonvolatile memory to the SRAM by
a software address sequence. A software RECALL cycle is
initiated with a sequence of READ operations in a manner similar
to the software STORE initiation. To initiate the RECALL cycle,
the following sequence of CE controlled READ operations is
performed:
1. Read address 0x0E38, Valid READ
2. Read address 0x31C7, Valid READ
3. Read address 0x03E0, Valid READ
4. Read address 0x3C1F, Valid READ
5. Read address 0x303F, Valid READ
6. Read address 0x0C63, Initiate RECALL cycle
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared, and then the nonvolatile information is transferred into
the SRAM cells. After the t
RECALL
cycle time, the SRAM is once
again ready for READ and WRITE operations. The RECALL
operation does not alter the data in the nonvolatile elements. The
nonvolatile data can be recalled an unlimited number of times.
Preventing STORE
The STORE
function can be disabled on the fly by holding HSB
high with a driver capable of sourcing 30 mA at a V
OH
of at least
2.2V, because it has to overpower the internal pull down device.
This device drives HSB LOW for 20
μ
s at the onset of a STORE.
When the STK14C88-3 is connected for AutoStore operation
(system V
CC
connected to V
CC
and a 68
μ
F capacitor on V
CAP
)
and V
CC
crosses V
SWITCH
on the way down, the STK14C88-3
attempts to pull HSB LOW. If HSB does not actually get below
V
IL
, the part stops trying to pull HSB LOW and aborts the STORE
attempt.
Hardware Protect
The STK14C88-3 offers hardware protection against inadvertent
STORE
operation and SRAM WRITEs during low voltage condi-
tions. When V
CAP
<V
SWITCH
, all externally initiated
STORE
operations and SRAM WRITEs are inhibited.
Noise Considerations
The STK14C88-3 is a high speed memory. It must have a high
frequency bypass capacitor of approximately 0.1 µF connected
between V
CC
and V
SS,
using leads and traces that are as short
as possible. As with all high speed CMOS ICs, careful routing of
power, ground, and signals reduce circuit noise.
Low Average Active Power
CMOS technology provides the STK14C88-3 the benefit of
drawing significantly less current when it is cycled at times longer
than 50 ns.
Figure 4
and
Figure 5
show the relationship between
I
CC
and READ or WRITE cycle time. Worst case current
consumption is shown for both CMOS and TTL input levels
(commercial temperature range, VCC = 3.6V, 100% duty cycle
on chip enable). Only standby current is drawn when the chip is
disabled. The overall average current drawn by the STK14C88-3
depends on the following items:
1. The duty cycle of chip enable
2. The overall cycle rate for accesses
3. The ratio of READs to WRITEs
4. CMOS versus TTL input levels
5. The operating temperature
6. The V
CC
level
7. IO loading
Figure 4. Current Versus Cycle Time (READ)
Figure 5. Current Versus Cycle Time (WRITE)
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