Cypress Semiconductor MoBL CY62148BN, Specification Sheet

Page: 5 / 10

CY62148BN MoBL
®
Document #: 001-06517 Rev. *A Page 5 of 10
Data Retention Characteristics
(Over the Operating Range)
Parameter Description Conditions Min. Typ.
[1]
Max. Unit
V
DR
V
CC
for Data Retention 2.0 V
I
CCDR
Data Retention Current Com’l LL No input may exceed
V
CC
+ 0.3V
V
CC
= V
DR
= 3.0V
CE > V
CC
– 0.3V
V
IN
> V
CC
– 0.3V or
V
IN
< 0.3V
20
µ
A
Ind’l LL 20
µ
A
t
CDR
[4]
Chip Deselect to Data Retention Time 0 ns
t
R
[9]
Operation Recovery Time t
RC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No.1
[10, 11]
Read Cycle No. 2 (OE Controlled)
[11, 12]
Notes:
9. Full Device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100 ms or stable at V
cc(min)
> 100 ms.
10. Device is continuously selected. OE, CE = V
IL
.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
3.0V 3.0V
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
CE
V
CC
PREVIOUS DATA VALID DATA VALID
t
RC
t
AA
t
OHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
HIGH
OE
CE
I
SB
IMPEDANCE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
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