CY7C185
4
Switching Characteristics
Over the Operating Range
[5]
7C185–15
7C185–20
7C185–25
7C185–35
Parameter
Description
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
t
RC
Read Cycle Time
15
20
25
35
ns
t
AA
Address to Data Valid
15
20
25
35
ns
t
OHA
Data Hold from
Address Change
3
5
5
5
ns
t
ACE1
CE
1
LOW to Data Valid
15
20
25
35
ns
t
ACE2
CE
2
HIGH to Data Valid
15
20
25
35
ns
t
DOE
OE LOW to Data Valid
8
9
12
15
ns
t
LZOE
OE LOW to Low Z
3
3
3
3
ns
t
HZOE
OE HIGH to High Z
[6]
7
8
10
10
ns
t
LZCE1
CE
1
LOW to Low Z
[7]
3
5
5
5
ns
t
LZCE2
CE
2
HIGH to Low Z
3
3
3
3
ns
t
HZCE
CE
1
HIGH to High Z
[6, 7]
CE
2
LOW to High Z
7
8
10
10
ns
t
PU
CE
1
LOW to Power-Up
CE
2
to HIGH to Power-Up
0
0
0
0
ns
t
PD
CE
1
HIGH to Power-Down
CE
2
LOW to Power-Down
15
20
20
20
ns
WRITE CYCLE
[8]
t
WC
Write Cycle Time
15
20
25
35
ns
t
SCE1
CE
1
LOW to Write End
12
15
20
20
ns
t
SCE2
CE
2
HIGH to Write End
12
15
20
20
ns
t
AW
Address Set-Up to
Write End
12
15
20
25
ns
t
HA
Address Hold from
Write End
0
0
0
0
ns
t
SA
Address Set-Up to
Write Start
0
0
0
0
ns
t
PWE
WE Pulse Width
12
15
15
20
ns
t
SD
Data Set-Up to Write End
8
10
10
12
ns
t
HD
Data Hold from Write End
0
0
0
0
ns
t
HZWE
WE LOW to High Z
[6]
7
7
7
8
ns
t
LZWE
WE HIGH to Low Z
3
5
5
5
ns
Notes:
5.
Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
6.
t
HZOE,
t
HZCE
, and t
HZWE
are specified with C
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured
±
500 mV from steady state voltage.
7.
At any given temperature and voltage condition, t
HZCE
is less than t
LZCE1
and t
LZCE2
for any given device.
8.
The internal write time of the memory is defined by the overlap of CE
1
LOW, CE
2
HIGH, and WE LOW. All 3 signals must be active to initiate a write and either
signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
