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CY7C1416AV18, CY7C1427AV18
CY7C1418AV18, CY7C1420AV18

Document Number: 38-05616 Rev. *F

Page 30 of 31

Document History Page

Document Title: CY7C1416AV18, CY7C1427AV18, CY7C1418AV18, CY7C1420AV18, 36-Mbit DDR-II SRAM 2-Word Burst 
Architecture
Document Number: 38-05616

Rev.

ECN

Oirg. Of 
Change

Submission Date Description Of Change

**

247331

SYT

08/26/04

New Data Sheet

*A

326519

SYT

04/14/05

Removed CY7C1420AV18 from the title
Included 300 MHz Speed grade
Replaced TBDs with their respective values for I

DD

 and I

SB1

Added Industrial temperature grade 
Replaced the TBDs on the Thermal Characteristics Table to 

Θ

JA 

= 17.2

°

C/W 

and 

Θ

JC 

= 3.2

°

C/W

Replaced TBDs in the Capacitance Table to their respective values for the 
165 FBGA Package
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS 
TRI-STATE on Page 18
Added lead-free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per 
availability

*B

413953

NXR

12/22/05

Converted from preliminary to final
Added CY7C1427AV18 part number to title
Added 278-MHz speed Bin
Changed C, C Description in Feature Section and Pin Description

Changed address of Cypress Semiconductor Corporation on Page# 1 from 
“3901 North First Street” to “198 Champion Court”
Added Power-up sequence and Wave form on page# 19
Added Footnotes# 13, 14, 15 on page# 19
Replaced Three-state with Tri-state
Changed the description of I

X

 from Input Load Current to Input Leakage 

Current on page# 20
Modified the I

DD

 and I

SB

 values

Modified test condition in Footnote #17 on page# 20 from V

DDQ 

< V

DD 

to 

V

DDQ 

< V

DD

Replaced Package Name column with Package Diagram in the Ordering
Information table.
Updated Ordering Information Table

*C

468029

NXR

 07/10/06

Modified the ZQ Definition from Alternately, this pin can be connected 
directly to V

DD 

to Alternately, this pin can be connected directly to V

DDQ

Included Maximum Ratings for Supply Voltage on V

DDQ

 Relative to GND

Changed the Maximum Ratings for DC Input Voltage from V

DDQ

 to V

DD

Changed t

TH 

and t

TL 

from 40 ns to 20 ns, changed t

TMSS

, t

TDIS

, t

CS

, t

TMSH

t

TDIH

, t

CH 

from

 

10 ns to 5 ns and changed t

TDOV 

from 20 ns to 10 ns in TAP 

AC Switching Characteristics table 
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied 
from –10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table

*D

505682

VKN

12/19/06

Corrected typo in the Functional Description section for burst counter logic

[+] Feedback 

Summary of Contents for CY7C1416AV18

Page 1: ...es of the input K clock Write data is registered on the rising edges of both K and K Read data is driven on the rising edges of C and C if provided or on the rising edge of K and K if C C are not prov...

Page 2: ...egister Read Add Decode Read Data Reg R W Output Logic Reg Reg Reg 8 16 8 NWS 1 0 VREF Write Add Decode 8 21 C C 8 LD Control R W DOFF 2M x 8 Array 2M x 8 Array 8 DQ 7 0 8 CQ CQ Write Reg Write Reg CL...

Page 3: ...R W Output Logic Reg Reg Reg 18 36 18 BWS 1 0 VREF Write Add Decode 18 21 C C 18 LD Control Burst Logic A0 A 20 1 R W DOFF 1M x 18 Array 1M x 18 Array 20 18 DQ 17 0 18 CQ CQ Write Reg Write Reg CLK A...

Page 4: ...DDQ VSS VSS VSS VDDQ NC NC DQ0 M NC NC NC VSS VSS VSS VSS VSS NC NC NC N NC NC NC VSS A A A VSS NC NC NC P NC NC DQ7 A A C A A NC NC NC R TDO TCK A A A C A A A TMS TDI CY7C1427AV18 4M x 9 1 2 3 4 5 6...

Page 5: ...A A NC NC DQ0 R TDO TCK A A A C A A A TMS TDI CY7C1420AV18 1M x 36 1 2 3 4 5 6 7 8 9 10 11 A CQ NC 144M A R W BWS2 K BWS1 LD A NC 72M CQ B NC DQ27 DQ18 A BWS3 K BWS0 A NC NC DQ8 C NC NC DQ28 VSS A A0...

Page 6: ...A0 Input Synchronous Address Inputs These address inputs are multiplexed for both read and write operations Internally the device is organized as 4M x 8 2 arrays each of 2M x 8 for CY7C1416AV18 4M x...

Page 7: ...ed between ZQ and ground Alternatively connect this pin directly to VDDQ which enables the minimum impedance mode This pin cannot be connected directly to GND or left unconnected DOFF Input DLL Turn O...

Page 8: ...the address in a linear fashion On the following K clock rise the data presented to D 17 0 is latched and stored into the 18 bit write data register provided BWS 1 0 are both asserted active On the s...

Page 9: ...to the output clock of the DDR II In the single clock mode CQ is generated with respect to K and CQ is generated with respect to K The timings for the echo clocks is shown in the AC Timing Table DLL T...

Page 10: ...yte D 8 0 is written into the device D 17 9 remains unaltered H L L H During the data portion of a write sequence CY7C1416AV18 only the upper nibble D 7 4 is written into the device D 3 0 remains unal...

Page 11: ...ten into the device D 35 9 remains unaltered L H H H L H During the Data portion of a write sequence only the lower byte D 8 0 is written into the device D 35 9 remains unaltered H L H H L H During th...

Page 12: ...ing edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TAP...

Page 13: ...ary scan register After the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRELOAD...

Page 14: ...ontroller follows 9 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 SELECT IR S...

Page 15: ...HIGH Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register Identification Register 0 1 2 108 0 1 2 In...

Page 16: ...tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 ns TAP Timing and Test Conditions F...

Page 17: ...nstruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TD...

Page 18: ...7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P...

Page 19: ...ock K K for 1024 cycles to lock the DLL DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which is specified as tKC Var The DLL functions at frequencies...

Page 20: ...V VOH Output HIGH Voltage Note 16 VDDQ 2 0 12 VDDQ 2 0 12 V VOL Output LOW Voltage Note 17 VDDQ 2 0 12 VDDQ 2 0 12 V VOH LOW Output HIGH Voltage IOH 0 1 mA Nominal Impedance VDDQ 0 2 VDDQ V VOL LOW O...

Page 21: ...atic 300MHz x8 345 mA x9 345 x18 360 x36 400 278MHz x8 325 mA x9 330 x18 345 x36 370 250MHz x8 320 mA x9 320 x18 330 x36 350 200MHz x8 300 mA x9 300 x18 300 x36 315 167MHz x8 285 mA x9 285 x18 290 x36...

Page 22: ...e Junction to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance in accordance with EIA JESD51 17 2 C W JC Thermal Resistance Junction to Case 3 2 C W...

Page 23: ...up to K Clock Rise LD R W 0 4 0 4 0 5 0 6 0 7 ns tSCDDR tIVKH Double Data Rate Control Setup to Clock K K Rise BWS0 BWS1 BWS2 BWS3 0 3 0 3 0 35 0 4 0 5 ns tSD 23 tDVKH D X 0 Setup to Clock K K Rise 0...

Page 24: ...CHQZ Clock C C Rise to High Z Active to High Z 24 25 0 45 0 45 0 45 0 45 0 50 ns tCLZ tCHQX1 Clock C C Rise to Low Z 24 25 0 4 5 0 4 5 0 4 5 0 4 5 0 5 0 ns DLL Timing tKC Var tKC Var Clock Phase Jitte...

Page 25: ...tKH tKHKH tKL tCYC A0 D20 D21 D30 D31 Q00 Q11 Q01 Q10 A1 A2 A3 A4 Q41 tCCQO tCQOH tCCQO tCQOH tKL tCYC K K LD R W A DQ C C CQ CQ SA tKH tKHKH tCQD tCQDOH Notes 26 Q00 refers to output from address A0...

Page 26: ...ll Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1427AV18 300BZI CY7C1418AV18 300BZI CY7C1420AV18 300BZI CY7C1416AV18 300BZXI 51 85195 165 Ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm...

Page 27: ...18 250BZXI 200 CY7C1416AV18 200BZC 51 85195 165 Ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Commercial CY7C1427AV18 200BZC CY7C1418AV18 200BZC CY7C1420AV18 200BZC CY7C1416AV18 200BZXC 51 85195 16...

Page 28: ...AV18 167BZXC CY7C1416AV18 167BZI 51 85195 165 Ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1427AV18 167BZI CY7C1418AV18 167BZI CY7C1420AV18 167BZI CY7C1416AV18 167BZXI 51 85195 165...

Page 29: ...8AV18 CY7C1420AV18 Document Number 38 05616 Rev F Page 29 of 31 Package Diagram Figure 6 165 ball FBGA 15 x 17 x 1 4 mm 51 85195 0 2 2 8 8 8 3 4 0 0 2 2 4 0 6 7 44 6 7 0 2 0 2 3 2 0 490 3 2 3 3 4 3 0...

Page 30: ...h First Street to 198 Champion Court Added Power up sequence and Wave form on page 19 Added Footnotes 13 14 15 on page 19 Replaced Three state with Tri state Changed the description of IX from Input L...

Page 31: ...ed above is prohibited without the express written permission of Cypress Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND EXPRESS OR IMPLIED WITH REGARD TO THIS MATERIAL INCLUDING BUT NOT LIMITED TO T...

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