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CY7C1365C

Document #: 38-05690 Rev. *E

Page 5 of 18

Pin Descriptions

 

Name

TQFP

I/O

Description

A0, A1, A

37,36,32,33,34,35,44,45,46,
47,48,49,50,81,82,99,100
92 (for 2 Chip Enable Version)
43 (for 3 Chip Enable Version)

Input-

Synchronous

Address Inputs used to select one of the 256K address 
locations

. Sampled at the rising edge of the CLK if ADSP or ADSC 

is active LOW, and CE

1

,

 

CE

2

, and

 

CE

are sampled active. A

[1:0]

 feed 

the 2-bit counter.

BW

A, 

BW

B, 

BW

C, 

BW

D

93,94,
95,96

Input-

Synchronous

Byte Write Select Inputs, active LOW

. Qualified with BWE to 

conduct Byte Writes to the SRAM. Sampled on the rising edge of 
CLK.

GW

88

Input-

Synchronous

Global Write Enable Input, active LOW

. When asserted LOW on 

the rising edge of CLK, a global write is conducted (ALL bytes are 
written, regardless of the values on BW

[A:D]

 and BWE).

BWE

87

Input-

Synchronous

Byte Write Enable Input, active LOW

. Sampled on the rising edge 

of CLK. This signal must be asserted LOW to conduct a Byte Write.

CLK

89

Input-Clock

Clock Input

. Used to capture all synchronous inputs to the device. 

Also used to increment the burst counter when ADV is asserted LOW, 
during a burst operation.

CE

1

98

Input-

Synchronous

Chip Enable 1 Input, active LOW

. Sampled on the rising edge of 

CLK. Used in conjunction with CE

2

 and CE

3

 to select/deselect the 

device. ADSP is ignored if CE

1

 is HIGH. CE

1

 is sampled only when 

a new external address is loaded.

CE

2

97

Input-

Synchronous

Chip Enable 2 Input, active HIGH

. Sampled on the rising edge of 

CLK. Used in conjunction with CE

1

 and CE

3

 to select/deselect the 

device. CE

is sampled only when a new external address is loaded.

CE

3

92 (for 3 Chip Enable Version)

Input-

Synchronous

Chip Enable 3 Input, active LOW

. Sampled on the rising edge of 

CLK. Used in conjunction with CE

1

 and CE

2

 to select/deselect the 

device. CE

3

 is assumed active throughout this document for BGA. 

CE

3

 is sampled only when a new external address is loaded.

OE

86

Input-

Asynchronous

Output Enable, asynchronous input, active LOW

. Controls the 

direction of the I/O pins. When LOW, the I/O pins behave as outputs. 
When deasserted HIGH, I/O pins are tri-stated, and act as input data 
pins. OE is masked during the first clock of a Read cycle when 
emerging from a deselected state. 

ADV

83

Input-

Synchronous

Advance Input signal, sampled on the rising edge of CLK

. When 

asserted, it automatically increments the address in a burst cycle.

ADSP

84

Input-

Synchronous

Address Strobe from Processor, sampled on the rising edge of 
CLK, active LOW

. When asserted LOW, addresses presented to the 

device are captured in the address registers. A

[1:0]

 are also loaded 

into the burst counter. When ADSP and ADSC are both asserted, 
only ADSP is recognized. ASDP is ignored when CE

1

 is deasserted 

HIGH.

ADSC

85

Input-

Synchronous

Address Strobe from Controller, sampled on the rising edge of 
CLK, active LOW

. When asserted LOW, addresses presented to the 

device are captured in the address registers. A

[1:0]

 are also loaded 

into the burst counter. When ADSP and ADSC are both asserted, 
only ADSP is recognized.

ZZ

64

Input-

Asynchronous

ZZ “sleep” Input, active HIGH

. When asserted HIGH places the 

device in a non-time-critical “sleep” condition with data integrity 
preserved. For normal operation, this pin has to be LOW or left 
floating. ZZ pin has an internal pull-down.

DQs

52,53,56, 57,58,59, 62,63,68,
69,72,73,74,75,78,79,2,3,6,7,
8,9,12,13,18,19,22,23,24,25,
28,29

I/O-

Synchronous

Bidirectional Data I/O lines

. As inputs, they feed into an on-chip 

data register that is triggered by the rising edge of CLK. As outputs, 
they deliver the data contained in the memory location specified by 
the addresses presented during the previous clock rise of the read 
cycle. The direction of the pins is controlled by OE. When OE is 
asserted LOW, the pins behave as outputs. When HIGH, DQs are 
placed in a tri-state condition.

[+] Feedback 

Summary of Contents for CY7C1365C

Page 1: ...ts include all addresses all data inputs address pipelining Chip Enable CE1 depth expansion Chip Enables CE2 and CE3 2 Burst Control inputs ADSC ADSP and ADV Write Enables BW A D and BWE and Global Wr...

Page 2: ...ARRAY MODE A 1 0 ZZ DQs A0 A1 A ADV CLK ADSP ADSC BWD BWC BWB BWA BWE CE1 CE2 CE3 OE GW SLEEP CONTROL DQA BYTE WRITE REGISTER DQB BYTE WRITE REGISTER DQC BYTE WRITE REGISTER BYTE WRITE REGISTER DQD BY...

Page 3: ...DDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BWS D BWS C BWS B BWS A A V DD V SS CLK GW BWE OE ADSP A A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1...

Page 4: ...VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BWS D BWS C BWS B BWS A CE 3 V DD V SS CLK GW BWE OE ADSP A A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17...

Page 5: ...throughout this document for BGA CE3 is sampled only when a new external address is loaded OE 86 Input Asynchronous Output Enable asynchronous input active LOW Controls the direction of the I O pins...

Page 6: ...60 71 76 I O Ground Ground for the I O circuitry MODE 31 Input Static Selects Burst Order When tied to GND selects linear burst sequence When tied to VDD or left floating selects interleaved burst seq...

Page 7: ...te writes BWA controls DQA and BWB controls DQB BWC controls DQC and BWD controls DQD All I Os are tri stated during a byte write Since this is a common I O device the asynchronous OE input signal mus...

Page 8: ...Burst Next H X X L X H L H L L H Q Read Cycle Continue Burst Next H X X L X H L H H L H Tri State Write Cycle Continue Burst Next X X X L H H L L X L H D Write Cycle Continue Burst Next H X X L X H L...

Page 9: ...H H Write Bytes C A DQPC DQPA H L H L H L Write Bytes C B DQPC DQPB H L H L L H Write Bytes C B A DQPC DQPB DQPA H L H L L L Write Byte D DQPD H L L H H H Write Bytes D A DQPD DQPA H L L H H L Write B...

Page 10: ...IH Input HIGH Voltage for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 8 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI V...

Page 11: ...ollow standard test methods and procedures for measuring thermal impedance per EIA JESD51 29 41 C W JC Thermal Resistance Junction to Case 6 13 C W AC Test Loads and Waveforms OUTPUT R 317 R 351 5 pF...

Page 12: ...s tADH ADSP ADSC Hold after CLK Rise 0 5 0 5 ns tWEH GW BWE BW A D Hold after CLK Rise 0 5 0 5 ns tADVH ADV Hold after CLK Rise 0 5 0 5 ns tDH Data Input Hold after CLK Rise 0 5 0 5 ns tCEH Chip Enabl...

Page 13: ...CE2 is LOW or CE3 is HIGH tCYC tCL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES Data Out Q High Z tCLZ tDOH tCDV tOEHZ tCDV Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its initial...

Page 14: ...iming Diagrams continued tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES High Z BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Sin...

Page 15: ...ed tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A2 tCEH tCES Single WRITE D A3 A3 A4 BURST READ Back to Back READs High Z Q A2 Q A4 Q A4 1 Q A4 2 Q A4 3 t WEH t WES t OEHZ tDH tDS tCDV tOELZ A1 A5 A6...

Page 16: ...ial CY7C1365C 133AJXI 100 pin Thin Quad Flat Pack 14 x 20 x 1 4 mm Lead Free 2 Chip Enable 100 CY7C1365C 100AXC 51 85050 100 pin Thin Quad Flat Pack 14 x 20 x 1 4 mm Lead Free 3 Chip Enable Commercial...

Page 17: ...press products in life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges Intel and Pentium are registered t...

Page 18: ...page 6 Added Industrial operating range Updated Ordering Information Table B 377095 See ECN PCI Changed ISB2 from 30 to 40 mA Modified test condition in note 9 from VIH VDD to VIH VDD C 408725 See EC...

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