Cypress Semiconductor CY62147DV18, Specification Sheet

Page: 4 / 11

CY62147DV18
MoBL2™
Document #: 38-05343 Rev. *B Page 4 of 11
I
SB1
Automatic CE
Power-Down
Current —
CMOS Inputs
CE > V
CC
−
0.2V,
V
IN
>V
CC
–0.2V,
V
IN
<0.2V); f = f
MAX
(Address and Data
Only), f = 0 (OE,
WE, BHE and BLE)
V
CC(max)
=1.95V L 0.5 12 0.5 12
µ
A
LL 8 8
V
CC(max)
=2.25V L 0.5 18 0.5 18
LL 12 12
I
SB2
Automatic CE
Power-down
Current —
CMOS Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V, f = 0
V
CC(max)
=1.95V L 0.5 12 0.5 12
µ
A
LL 8 8
V
CC(max)
=2.25V L 0.5 18 0.5 18
LL 12 12
Capacitance
for all Packages
[8]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Thermal Resistance
Parameter Description Test Conditions BGA Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
[8]
Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
75
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case)
[8]
10
°
C/W
AC Test Loads and Waveforms
Parameters 1.80V Unit
R1 13500
Ω
R2 10800
Ω
R
TH
6000
Ω
V
TH
0.80 V
Data Retention Characteristics
(Over the Operating Range)
Parameter Description Conditions Min. Typ.
[7]
Max. Unit
V
DR
V
CC
for Data Retention 1.0 V
I
CCDR
Data Retention Current V
CC
= 1.0V CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
L 6
µ
A
LL 4
t
CDR
[8]
Chip Deselect to Data Retention Time 0 ns
t
R
Operation Recovery Time t
RC
ns
Notes:
8. Tested initially and after any design or process changes that may affect these parameters.
Electrical Characteristics Over the Operating Range
(continued)
Parameter Description Test Conditions
CY62147DV18-55 CY62147DV18-70
Unit Min. Typ.
[7]
Max. Min. Typ.
[7]
Max.
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns Fall Time = 1 V/ns
OUTPUT V
Equivalent to: THÉ VENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
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