Cypress Semiconductor CY62136EV30 MoBL, Specification Sheet, Page: 4 / 12

CY62136EV30
MoBL
®
Document #: 38-05569 Rev. *B Page 4 of 12
Thermal Resistance
[8]
Parameter Description Test Conditions
VFBGA
Package
TSOP II
Package Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
[8]
Still Air, soldered on a 3 × 4.5 inch, two-layer
printed circuit board 75 77
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case)
[8]
10 13
°
C/W
AC Test Loads and Waveforms
Parameters 2.50V 3.0V Unit
R1 16667 1103
Ω
R2 15385 1554
Ω
R
TH
8000 645
Ω
V
TH
1.20 1.75 V
Data Retention Characteristics
(Over the Operating Range)
[8, 9]
Parameter Description Conditions Min. Typ.
[4]
Max. Unit
V
DR
V
CC
for Data Retention 1.0 V
I
CCDR
Data Retention Current V
CC
= 1.0V
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
0.8 3
µ
A
t
CDR
[8]
Chip Deselect to Data
Retention Time 0 ns
t
R
[9]
Operation Recovery
Time t
RC
ns
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns Fall Time = 1 V/ns
OUTPUT V
TH
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
Data Retention Waveform
Notes:
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 100
µ
s or stable at V
CC(min.)
> 100
µ
s.
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.0 V
DATA RETENTION MODE
t
R
V
CC
CE
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