Cypress Semiconductor CY62136EV30 MoBL Specification Sheet Download Page 11

 

CY62136EV30

MoBL

®

Document #: 38-05569 Rev. *B

Page 11 of 12

© Cypress Semiconductor Corporation, 2006. The information contained herein is subject  to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company
names mentioned in this document may be the trademarks of their respective holders.

Package Diagrams 

(continued)

44-pin TSOP II (51-85087)

51-85087-*A

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Summary of Contents for CY62136EV30 MoBL

Page 1: ... O15 are placed in a high impedance state when deselected CE HIGH outputs are disabled OE HIGH both Byte High Enable and Byte Low Enable are disabled BHE BLE HIGH or during a write operation CE LOW and WE LOW Writing to the device is accomplished by taking Chip Enable CE and Write Enable WE inputs LOW If Byte Low Enable BLE is LOW then data from I O pins I O0 through I O7 is written into the locat...

Page 2: ...n Operating ICC mA Standby ISB2 µA f 1MHz f fmax Min Typ 4 Max Typ 4 Max Typ 4 Max Typ 4 Max CY62136EV30LL 2 2 3 0 3 6 45 2 2 5 15 20 1 7 WE A11 A10 A6 A0 A3 CE I O10 I O8 I O9 A4 A5 I O11 I O13 I O12 I O14 I O15 VSS A9 A8 OE Vss A7 I O0 BHE NC NC A2 A1 BLE VCC I O2 I O1 I O3 I O4 I O5 I O6 I O7 A15 A14 A13 A12 NC NC NC 3 2 6 5 4 1 D E B A C F G H A16 NC Vcc WE 1 2 3 4 5 6 7 8 9 10 11 14 31 32 36 ...

Page 3: ...4 V VIH Input HIGH Voltage VCC 2 2V to 2 7V 1 8 VCC 0 3 V VCC 2 7V to 3 6V 2 2 VCC 0 3 V VIL Input LOW Voltage VCC 2 2V to 2 7V 0 3 0 6 V VCC 2 7V to 3 6V 0 3 0 8 V IIX Input Leakage Current GND VI VCC 1 1 µA IOZ Output Leakage Current GND VO VCC Output Disabled 1 1 µA ICC VCC Operating Supply Current f fMAX 1 tRC VCC VCCmax IOUT 0 mA CMOS levels 15 20 mA f 1 MHz 2 2 5 ISB1 Automatic CE Power down...

Page 4: ...teristics Over the Operating Range 8 9 Parameter Description Conditions Min Typ 4 Max Unit VDR VCC for Data Retention 1 0 V ICCDR Data Retention Current VCC 1 0V CE VCC 0 2V VIN VCC 0 2V or VIN 0 2V 0 8 3 µA tCDR 8 Chip Deselect to Data Retention Time 0 ns tR 9 Operation Recovery Time tRC ns VCC VCC OUTPUT R2 30 pF INCLUDING JIG AND SCOPE GND 90 10 90 10 Rise Time 1 V ns Fall Time 1 V ns OUTPUT VT...

Page 5: ... LOW to Write End 35 ns tSD Data Set Up to Write End 25 ns tHD Data Hold from Write End 0 ns tHZWE WE LOW to High Z 11 12 18 ns tLZWE WE HIGH to Low Z 11 10 ns Notes 10 Test conditions for all parameters other than tri state parameters assume signal transition time of 3 ns 1V ns or less timing reference levels of VCC typ 2 input pulse levels of 0 to VCC typ and output loading of the specified IOL ...

Page 6: ...ontinuously selected OE CE VIL BHE and or BLE VIL 15 WE is HIGH for read cycle 16 Address valid prior to or coincident with CE and BHE BLE transition LOW ADDRESS DATA OUT PREVIOUS DATA VALID DATA VALID tRC tAA tOHA 50 50 DATA VALID tRC tACE tLZBE tLZCE tPU DATA OUT HIGH IMPEDANCE IMPEDANCE ICC ISB tHZOE tHZCE tPD OE CE HIGH VCC SUPPLY CURRENT tHZBE BHE BLE tLZOE ADDRESS tDBE tDOE Feedback ...

Page 7: ...IGH simultaneously with WE VIH the output remains in a high impedance state 19 During this period the I Os are in output state and input signals should not be applied Switching Waveforms continued 14 15 tHD tSD tPWE tSA tHA tAW tWC DATA I O ADDRESS CE WE OE tHZOE DATAIN NOTE19 BHE BLE tBW tSCE tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATAIN CE ADDRESS WE DATA I O OE NOTE 19 BHE BLE tBW tSA Feedback ...

Page 8: ... LOW 18 Write Cycle No 4 BHE BLE Controlled OE LOW 18 Switching Waveforms continued 14 15 DATAIN tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE CE ADDRESS WE DATAI O NOTE 19 tBW BHE BLE DATA I O ADDRESS tSD tSA tHA tAW tWC CE WE DATAIN NOTE 19 tBW BHE BLE tSCE tPWE tHZWE tHD tLZWE Feedback ...

Page 9: ...ICC L H H H L High Z Output Disabled Active ICC L H H L H High Z Output Disabled Active ICC L L X L L Data In I OO I O15 Write Active ICC L L X H L Data In I OO I O7 I O8 I O15 in High Z Write Active ICC L L X L H Data In I O8 I O15 I O0 I O7 in High Z Write Active ICC Ordering Information Speed ns Ordering Code Package Diagram Package Type Operating Range 45 CY62136EV30LL 45BVXI 51 85150 48 ball ...

Page 10: ...8X Ø0 25 M C A B Ø0 05 M C B A 0 15 4X 0 21 0 05 1 00 MAX C SEATING PLANE 0 55 MAX 0 25 C 0 10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3 75 5 25 B C D E F G H 6 5 4 6 5 2 3 1 D H F G E C B A 6 00 0 10 8 00 0 10 A 8 00 0 10 6 00 0 10 B 1 875 2 625 0 26 MAX 48 pin VFBGA 6 x 8 x 1 mm 51 85150 51 85150 D Feedback ...

Page 11: ...ursuant to an express written agreement with Cypress Furthermore Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer assumes all risk of such use and in do...

Page 12: ...A to 15 mA at f fmax Changed ISB1 and ISB2 Typ values from 0 7 µA to 1 µA and Max values from 2 5 µA to 7 µA Changed the AC test load capacitance from 50pF to 30pF on Page 4 Changed VDR from 1 5V to 1V on Page 4 Changed ICCDR from 2 5 µA to 3 µA Added ICCDR typical value Changed tOHA tLZCE and tLZWE from 6 ns to 10 ns Changed tLZBE from 6 ns to 5 ns Changed tLZOE from 3 ns to 5 ns Changed tHZOE tH...

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