Low Noise Amplifier Series
Revision 2
Introduction
1–2
MN-LNAS
Figure 1-3. Ku-band LNA
Figure 1-4. Ka-band LNA
1.2
Technology
The amplifiers incorporate both High Electron Mobility Transistors (HEMT) devices for low noise
temperature performance and Gallium Arsenide Feed Effect Transistors (GaA FETs) devices for
low intermodulation. The units use surface mounted components for robotic manufacturing
techniques, thereby insuring maximum product consistency and enhanced reliability. The X-band
LNA includes integrated filtering to address adjacent power issues peculiar to demanding X-band
terminals.
1.3
Reliability
The amplifier series utilizes proprietary circuitry and high quality components to achieve a mean
time between failures (MTBF) in excess of 160,000 hours. Each unit is temperature cycled from
-40 to +60
°
C (-40 to 140
°
F).
1.4
Construction
The LNAs are housed in waterproof enclosures with a small profiles to better accommodate
redundancy configurations. The enclosures also provide a pressurizable, integral waveguide
flange. Subsystems
The one backup for one primary (1+1) and one backup for two primary (1+2) redundant LNA and
LNB systems are available complete with mounting plate, brackets, and indoor Redundancy
Controller/Power Supply (transmit reject filters, cables, and other integration materials are
offered, as required).
