W25Q16BV
- 58 -
12.7
AC Electrical Characteristics (
cont’d)
SPEC
DESCRIPTION SYMBOL
ALT
MIN TYP
MAX
UNIT
/HOLD
Active Setup Time relative to CLK
t
HLCH
5
ns
/HOLD
Active Hold Time relative to CLK
t
CHHH
5
ns
/HOLD
Not Active Setup Time relative to CLK
t
HHCH
5
ns
/HOLD
Not Active Hold Time relative to CLK
t
CHHL
5
ns
/HOLD
to Output Low-Z
t
HHQX(2)
t
LZ
7
ns
/HOLD
to Output High-Z
t
HLQZ(2)
t
HZ
7
ns
Write Protect Setup Time Before /CS Low
t
WHSL(3)
20
ns
Write Protect Hold Time After /CS High
t
SHWL(3)
100
ns
/CS High to Power-down Mode
t
DP(2)
3 µs
/CS High to Standby Mode without Electronic
Signature Read
t
RES
1
(2)
3
µs
/CS High to Standby Mode with Electronic Signature
Read
t
RES
2
(2)
1.8 µs
/CS High to next Instruction after Suspend
t
SUS(2)
20 µs
Write Status Register Time
t
W
10 15 ms
Byte Program Time (First Byte)
(4)
t
BP1
20 50 µs
Additional Byte Program Time (After First Byte)
(4)
t
BP2
2.5 12 µs
Page Program Time
t
PP
0.7 3 ms
Sector Erase Time (4KB)
t
SE
30
200/400
(5)
ms
Block Erase Time (32KB)
t
BE
1
120 800 ms
Block Erase Time (64KB)
t
BE
2
150 1000 ms
Chip Erase Time
t
CE
3 10 s
Notes:
1.
Clock high + Clock low must be less than or equal to 1/f
C
.
2.
Value guaranteed by design and/or characterization, not 100% tested in production.
3.
Only applicable as a constraint for a Write Status Register instruction when SRP0 is set to 1.
4. For multiple bytes after first byte within a page,
t
BPN
=
t
BP1
+
t
BP2
*
N
(typical) and
t
BPN
=
t
BP1
+
t
BP2
*
N
(max), where N =
number of bytes programmed.
5.
Max Value t
SE
with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
