Voxtel VS600, Руководство по обслуживанию

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VS600 Service Manual
VOXTEL Technical Documentation 15
control. The SIM interface provides the level shift between SIM card and
microprocessor.
●
Power Management Section
Voltage regulator
Battery charger
Battery production
Microphone
MARQUESS MM-OB622S-42C33C10
Sensitivity
：
-42±3 dB at 1kHz, 1V/Pa
Output Impedance
：
2.2k+-10% ohm at 1kHz,
S/N Ratio (A curve)
：
min 58 dBv/Pa at 1kHz,
Dimension
：
φ
6.0 * 2.2 mm
Directional characteristic
：
omni-directional
Operating voltage
：
DC 2V
Loud Speaker Part number
：
Speaker-Receiver dual type MT-2014ESF
Impedance
：
8 Ω
±
1.2 Ω at 1KHz, 1Vrms.
SPL for Dynamic Speaker: 100
±
3 dB at 0.5W 1KHz.
SPL for Dynamic Receiver: 123dB
±
3dB at 1.0KHz, 100mV with IEC R318 coupler.
Resonance Frequency (Fo)
：
800Hz
±
160 Hz, 1V
Rated Input (Nom./Max.) for Speaker
：
0.5 W/ 0.8W
Frequency Range
：
Fo ~ 20 kHz. (Receiver: 300Hz~3.4kHz)
Dimension
：
20
×
14
×
T4.6 [mm]
Stacked-MCP
Architecture
(128Mbit Flash +
64Mbit PSRAM)
Spansion S71PL129JC0
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM
128 Megabit (8M x 16-bit) CMOS 3.0 voltage-only simultaneous operation, page mode flash memory
with 64 Megabit (4M x 16-bit) pseudo-static RAM.
Power supply voltage of 2.7 to 3.1 Volt
Access time: 65ns flash and 70ns pSRAM
Operating temperature: -25
°
C to +85
°
C (wireless)
-40
°
C to +85
°
C (Industrial)
Both top and bottom boot blocks in one device.