Voxtel BD20, Руководство по обслуживанию

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Block Diagram
9.2 RF Block Diagram
0
DET
Of
fset
L Transmi
tt
er
Si
420
0
Ph
ase D
et
ect
or Updat
e F
req. :
200 k
H
z
Si
deban
d S
u
ppress
io
n
:
-
4
6 d
B
c(m
ax
Hz s
inus
o
id
)
Carri
er
S
u
pp
ress
io
n
:
-
48 dBc(
m
ax
H
z s
inus
o
id
)
IM3 S
u
ppress
io
n
:
-
57 dBc(m
ax
Hz
si
nus
o
id
)
Po
we
ru
p Settling
T
im
e :
m
ax
150u
s
I
RF3
1
10
EGS
M
M
ax
Pou
t :
+34.5~35.0 dBm
(T
em
p
=25
C
,
Vbat
=3.5 V, Vra
m
p=
Vra
m
p
m
ax
)
+32.0
dBm
(
T
em
p
=
+85
C, Vbat
=3.0 V, Vra
m
p=
Vra
m
p
m
ax
)
Total
Ef
fi
cien
cy
:
47~53%
(P
ou
t,m
ax
, Vbat
=3.5 V)
In
pu
t P
o
w
er Ra
n
g
e :
t
y
pi
cal
+6dB
m
(+4
~
+
8 dB
m
)
Ou
tp
u
t Noi
se Po
w
er :
-
86~-
8
0 dBm
(RBW
=100k
Hz,
925 t
o
93
5 MHz, Pou
t
+5 dBm
)
-8
8~-
85 dBm
(RBW
=100k
H
z,
935 t
o
96
0 MHz, Pou
t
+5 dBm
)
DC
S
Ma
x
Pou
t : +32~33 dBm
(T
em
p=25
C
,
Vbat
=3.5 V, Vr
am
p
=
Vra
m
p
m
ax
, 1710~178
5
)
+31.5 dBm
(1850~191
0
MHz)
+30.0 dBm
(T
em
p
=85
C
, Vb
at
=3.0 V
, Vra
m
p
=
Vra
m
p
m
ax
, 1710~1785
)
+29.5 dBm
(1850~191
0
MHz)
Tot
al
Ef
fi
cien
cy
:
47~53%
(P
ou
t,m
ax
, Vbat
=3.5 V)
In
pu
t Pow
er R
ang
e :
t
y
p
ical
+6dB
m
(+4~
+8 dB
m
)
Ou
tp
u
t Noi
se Po
w
er :
-
7
7 dBm
(RBW
=100k
H
z, 1805 t
o
188
0 MHz, 1930 to
199
0
MHz,
Po
ut
+34.5 dBm
, Vb
at=3.5 V)
LN
A
LN
A
PGA PGA
CHANN EL
FILTER
PGA PGA
100kHz
EGSM SAW Filter
DC
S S
A
W F
ilter
LF
90A
Cen
ter Freq.
: 18
42.
5 MHz
IL
:
t
y
pi
cal
2.7 dB(
3.2
d
B m
ax)
Ri
ppl
e :
t
y
pi
ca
l 1.2 dB
(1.7
dB
m
ax
)
Su
ppress
io
n
:
-
2
2 dB(18
05~1
8
80MHz)
-2
8 d
B
(85
5~995MH
z)
-2
2
dB
(17
10~1990MHz)
B7706 Cen
ter F
req.
: 94
2.5 MHz
IL
:
t
y
pi
cal
2.6 dB(
3.2
d
B m
ax)
Ri
ppl
e :
t
y
pi
ca
l 1.3 dB
(1.9
dB
m
ax
)
Su
ppress
io
n
:
-
2
2 dB(18
05~1
8
80MHz)
-2
8 d
B
(85
5~995MH
z)
-2
2
dB
(17
10~1990MHz)
J
/2
AD
C
AD
C
DA
C
DA
C
BU
LIP
(
O
M
E
G
A
)
BU
LI
N
(
O
M
E
G
A
)
BU
LQP
(
O
M
E
G
A
)
BU
LQN
(
O
M
E
G
A
)
I
Q
13 M
H
z
(ULYSSE)
P
LL_C
LK
(U
LYSSE)
P
LL_DA
TA
(
U
L
Y
S
S
E)
P
LL_SYN
_EN
(U
LYSS
E)
BSW (
U
L
Y
SSE)
PA
_ON (U
LYS
S
E)
PB
D
(U
L
Y
SSE)
PA
_LE
V
EL(
OM
EG
A
)
RF
_E
N
A
(U
L
Y
SSE)
Q
BD
LIP
(
O
M
E
G
A
)
BD
LI
N
(
O
M
E
G
A
)
BD
LQP
(
O
M
E
G
A
)
BD
LQN
(
O
M
E
G
A
)
Power Am
p
Module
AFC (OMEG
A
)
IF
PL
L
RF
PL
L
BA
SEB
AND
Lo
w-IF Receiver
Dua
l RF Sy
nthes
izer
Si
413
3T
Univers
al B
a
se
band
Interface
Si
420
1
VC
TC
XO
TT
S
17V
LM
G
002S
-5
047A
EGS
M
T
x
to A
n
t : 880~915
MH
z, BW : 35 MH
z
IL
:
1.0
9 dB,
2f
o:
3
8
.9
dB, 3f
o:
32.
1
dB
An
t
to
Rx
:
925~960
MH
z, BW :
35 MH
z
IL
:
0.9
2 dB
Rx-T
x : 45
M
H
z,
G
u
ar
d
B
and
: 1
0
M
H
z
Tx
t
o
R
x
Is
ol
at
io
n
:
26.7 dB
DC
S
Tx
t
o
A
n
t : 1
7
10~1785
MH
z, BW :
70 MH
z
IL
:
1.
14 dB,
2f
o:
34.
8 d
B
, 3f
o:
3
7
.2
dB
An
t t
o
R
x
:
1805~188
0
MH
z, BW :
70 MH
z
IL
:
0.
96 dB
Rx
-T
x
:
95 MHz, G
u
ard Ban
d
:
20 MH
z
Tx
to
Rx
I
so
latio
n
: 2
8
.8
d
B
RX
TX
LP
F
LP
F
RX
TX
SW SW
DI
P
EGSM/DC
S A
n
tenn
a S/W
Lo
ca
l Frequency
RF
OD E-
GS
M :
880 ~ 915 MH
z
DC
S
:
1710
~ 1785 MH
z
RF2
E
-GS
M :
1279 ~ 131
4
MHz
DC
S
:
132
7
~ 140
2
MH
z
IF
E-
GS
M :
798 MHz(880-
89
5,900-
915
)
790
MHz(895-
90
0)
DC
S
:
766 MHz
PA_
O
N
(ULYSS
E)
PA_LE
V
E
L
(OM
E
GA)
BS
W
(U
LYSS
E
)
Si4
2
00
Noise Figu
re E-
GS
M : 2.7 dB(m
ax
3.4dB,25
C
)
DC
S
:
3.2 dB
(m
ax
3.9dB,25
C
)
Mi
n
im
u
m
Vol
ta
ge G
ai
n
GSM
:
8.5
dB(
4.5~12.
5dB
)
DC
S
:
15.5
dB
(11.
5~19.5dB
)
Ma
x
im
u
m V
o
lt
ag
e
G
ai
n
GS
M
: 104
dB
(10
0~108dB
)
DC
S :
102
dB
(96~106
dB)
LN
A G
ai
n
Co
nt
rol
R
ange GS
M :
17 dB(
13~21dB
)
DC
S
:
8 dB
(4~12
dB)
s
k
v
s
k
v
MI
C
5245
VB
A
T
RF_
E
N
A
RF2
V
85
RF2
V
85
RF2
V
85
RF2
V
85
RF2
V
85
VB
A
T
RF2
V
8
5
Si
420
0
Si4
2
00
Si4
2
00
9-2