background image

 

EVA-M8E - Hardware Integration Manual 

UBX-15028542 - R05 

Contents

  

Page 27 of 44 

Production Information 

 

 

The paste-mask geometry for applying soldering paste should meet the recommendations given in 
section 2.11.2.

 

4.3.2

 

Reflow soldering  

Preheat/ Soak Temperature min. 
Preheat/ Soak Temperature max. 
Preheat/ Soak Time from T

smin

 to T

smax

 

T

smin

 

T

smax

 

T

s

 (T

smin

 to T

smax

150°C 
180°C 
< 90 seconds 

Liquidus Temperature 
Time maintained above T

L

 

T

L

 

t

L

 

217°C 
40 to 60 seconds 

Peak Package Body Temperature 

T

P

 

250°C 

Ramp up rate (T

L

 to T

P

 

3°C/ second max. 

Time 0°C…-5°C of T

P

 

 

30 seconds 

Ramp down rate (T

P

 to T

L

 

4°C/ second max. 

Table 6: Recommended conditions for reflow process 

The peak temperature must not exceed 250°C. The time above 245°C must not exceed 30 seconds. 

 

EVA-M8E 

must not

 be soldered with a damp heat process. 

4.3.3

 

Optical inspection 

After soldering the EVA-M8E module, consider an optical inspection step to check whether: 

 

The module is properly aligned and centered over the pads 

4.3.4

 

Repeated reflow soldering 

Only single reflow soldering processes is recommended for boards populated with EVA-M8E module. 

4.3.5

 

Wave soldering 

Base boards with combined through-hole technology (THT) components and surface-mount 
technology (SMT) devices require wave soldering to solder the THT components. Only a single wave 
soldering process is encouraged for boards populated with EVA-M8E. 

4.3.6

 

Rework 

Not recommended. 

4.3.7

 

EOS/ESD/EMI precautions 

When integrating GNSS positioning modules into wireless systems, careful consideration must be 
given to electromagnetic and voltage susceptibility issues. Wireless systems include components 
that can produce Electrical Overstress (EOS) and Electro-Magnetic Interference (EMI). CMOS devices 
are more sensitive to such influences because their failure mechanism is defined by the applied 
voltage, whereas bipolar semiconductors are more susceptible to thermal overstress. The following 
design guidelines are provided to help in designing robust yet cost effective solutions. 

 

To avoid overstress damage during production or in the field it is essential to observe strict 
EOS/ESD/EMI handling and protection measures. 

 

To prevent overstress damage at the RF_IN of your receiver, never exceed the maximum input 
power (see the EVA-M8E Data Sheet [1]).

 

 

Содержание EVA-M8E

Страница 1: ...e u blox M8 positioning engine The EVA M8E offers flexibility in the selection and placement of an external Inertial Measurement Unit and Flash memory and achieves Dead Reckoning performance without r...

Страница 2: ...liance EVA M8E complie with all relevant requirements for RED 2014 53 EU The EVA M8E Declaration of Conformity DoC is available at www u blox com within Support Product resources Conformity Declaratio...

Страница 3: ...pulse 13 2 3 2 External interrupt 13 2 3 3 Active antenna supervisor 13 2 3 4 Electromagnetic interference and I O lines 14 2 4 Real Time Clock RTC 15 2 4 1 RTC using a crystal 15 2 4 2 RTC using an e...

Страница 4: ...ring 27 4 3 6 Rework 27 4 3 7 EOS ESD EMI precautions 27 4 3 8 Use of ultrasonic processes 28 5 Product testing 29 5 1 Test parameters for OEM manufacturer 29 5 2 System sensitivity test 29 5 2 1 Guid...

Страница 5: ...U4 40 B 9 RF ESD protection diode D2 40 B 10Operational amplifier U6 40 B 11Open drain buffer U7 U8 and U9 40 B 12LDO Voltage Regulator U10 40 B 13Antenna supervisor switch transistor T1 41 B 14Ferrit...

Страница 6: ...esponsive interactive applications Native high rate sensor data can be relayed to the host for applications such as driving behavior analysis or accident reconstruction The EVA M8E includes u blox s l...

Страница 7: ...ost system Antenna interface For optimal performance seek short routing matched impedance and no stubs External LNA With EVA M8E an additional external LNA is recommended if a passive antenna is used...

Страница 8: ...1 1 3 Backup power supply V_BCKP In the event of a power failure at VCC_IO the backup domain is supplied by V_BCKP If no backup supply is available connect V_BCKP to VCC_IO Avoid high resistance on th...

Страница 9: ...ilable that is independent from the application and accessible via test points For each interface a dedicated pin can be defined to indicate that data is ready to be transmitted The TX Ready signal in...

Страница 10: ...electrical interface are fully compatible with Fast Mode of the I2 C industry standard Since the maximum SCL clock frequency is 400 kHz thus the maximum transfer rate is 400 kbit s The DDC interface i...

Страница 11: ...rs Establish a full speed driver impedance of 28 44 A value of 27 is recommended R11 Resistor Ensures defined signal at VDD_USB when VBUS is not connected powered 100 k is recommended for USB self pow...

Страница 12: ...old is set to default 2 69 V value to support minimum 2 7 V VCC_IO voltage If the default value for the VCC_IO monitor threshold is not suitable it can be set according to the IO supply voltage level...

Страница 13: ...is always driven within the defined voltage level by the host For further information see the u blox 8 u blox M8 Receiver Description Protocol Specification 2 2 3 3 Active antenna supervisor The EVA...

Страница 14: ...e antenna via transistor T1 if a short circuit has been detected via U7 or if it s not required e g in Power Save Mode The status of the active antenna can be checked by the UBX MON HW message More in...

Страница 15: ...sing an external clock Some applications can provide a suitable 32 768 kHz external reference to drive the EVA M8E RTC The external reference can simply be connected to the RTC_I pin Make sure that th...

Страница 16: ...SAW filter F1 has to be connected between the external LNA U1 and the EVA M8E module s RF input If strong out band jammers are close to the GNSS antenna e g a GSM antenna see section 2 5 3 The LNA U1...

Страница 17: ...Boot Mode the EVA M8E module runs from an internal LC oscillator and starts regardless of any configuration provided by the configuration pins Thus it can be used to recover from situations where the...

Страница 18: ...A M8E module an external LNA is mandatory if no active antenna is used to achieve the performance values as written in the EVA M8E Data Sheet 1 Make sure the antenna is not placed close to noisy parts...

Страница 19: ...supply See section 2 1 20 VCC_IO I I O Supply See section 2 1 21 V_BCKP I Backup supply See section 2 1 22 SQI_D0 I O Data line 0 to external SQI flash memory or reserved configuration pin Leave open...

Страница 20: ...s possible around the micro strip coplanar waveguide around the serial communication lines underneath the GNSS module etc Calculation of the micro strip for RF input The micro strip coplanar waveguide...

Страница 21: ...ement A very important factor in achieving maximum GNSS performance is the placement of the receiver on the PCB The connection to the antenna must be as short as possible to avoid jamming into the ver...

Страница 22: ...e whereas bipolar semiconductors are more susceptible to thermal overstress The following design guidelines are provided to help in designing robust yet cost effective solutions To avoid overstress da...

Страница 23: ...s transmit power levels up to 2 W 33 dBm peak 3G and LTE up to 250 mW continuous Consult the corresponding product data sheet in 1 for the absolute maximum power input at the GNSS receiver Make sure t...

Страница 24: ...CDMA GSM WCDMA bandbass filter before handset antenna 2 13 5 4 Out band interference Out band interference is caused by signal frequencies that are different from the GNSS carrier see Figure 10 The ma...

Страница 25: ...odule makes use of GNSS and external 3D gyroscope and 3D accelerometer sensors only with no need or provision for speed pulse or forward reverse information Figure 12 EVA M8E with external sensors mod...

Страница 26: ...practices the following measures should be taken into account whenever handling the receiver Unless there is a galvanic coupling between the local GND i e the work table and the PCB GND then the firs...

Страница 27: ...oldering processes is recommended for boards populated with EVA M8E module 4 3 5 Wave soldering Base boards with combined through hole technology THT components and surface mount technology SMT device...

Страница 28: ...n 4 3 8 Use of ultrasonic processes Some components on the EVA M8E module are sensitive to Ultrasonic Waves Use of any Ultrasonic Processes cleaning welding etc may cause damage to the GNSS Receiver u...

Страница 29: ...tioning Technology www positioningtechnology co uk Figure 13 Multi GNSS generator 5 2 1 Guidelines for sensitivity tests 1 Connect a Multi GNSS generator to the OEM product 2 Choose the power level in...

Страница 30: ...15028542 R05 Appendix Page 30 of 44 Production Information Appendix A Reference schematics A 1 Cost optimized circuit Passive Antenna No RTC crystal No backup battery UART and DDC for communication t...

Страница 31: ...nual UBX 15028542 R05 Appendix Page 31 of 44 Production Information A 2 Best performance circuit with passive antenna External LNA RTC crystal Backup battery UART and DDC for communication to host Fig...

Страница 32: ...pendix Page 32 of 44 Production Information A 3 Improved jamming immunity with passive antenna External SAW filter LNA SAW filter RTC crystal Backup battery UART and DDC for communication to host Figu...

Страница 33: ...anual UBX 15028542 R05 Appendix Page 33 of 44 Production Information A 4 Circuit using active antenna Active antenna RTC crystal Backup battery UART and DDC for communication to host Figure 17 Standar...

Страница 34: ...X 15028542 R05 Appendix Page 34 of 44 Production Information A 5 USB self powered circuit with passive antenna External LNA RTC crystal Backup battery UART and DDC for communication to host USB interf...

Страница 35: ...al UBX 15028542 R05 Appendix Page 35 of 44 Production Information A 6 USB bus powered circuit with passive antenna External LNA RTC crystal Backup battery SPI for communication to host USB interface F...

Страница 36: ...5028542 R05 Appendix Page 36 of 44 Production Information A 7 Circuit using 2 pin antenna supervisor 2 pin antenna supervisor RTC crystal Backup battery UART and DDC for communication to host Figure 2...

Страница 37: ...5028542 R05 Appendix Page 37 of 44 Production Information A 8 Circuit using 3 pin antenna supervisor 3 pin antenna supervisor RTC crystal Backup battery UART and DDC for communication to host Figure 2...

Страница 38: ...A 32 768 kHz 7 0 pF 100 ppm Table 8 Recommend parts list for RTC crystal B 2 RF band pass filter F1 Depending on the application circuit consult manufacturer data sheet for DC ESD and RF power ratings...

Страница 39: ...muRata SAFEA1G58KA0F00 GPS GLONASS High attenuation only for mobile application muRata SAFFB1G58KA0F0A GPS GLONASS High attenuation only for mobile application muRata SAFFB1G58KB0F0A GPS GLONASS Low...

Страница 40: ...ture options Winbond W25Q32FV 3V 32Mbit several package temperature options Winbond W25Q64FV 3V 64Mbit only 32Mbit usable several package temperature options Table 15 Recommend parts list for mandator...

Страница 41: ...or data signals 34 pF load capacitance MuRata NFA18SL307V1A45 For data signals 4 circuits in 1 package MuRata NFM18PC474R0J3 For power supply 2 A size 0603 MuRata NFM21PC474R1C3 For power supply 4 A s...

Страница 42: ...Definition ANSI American National Standards Institute BeiDou Chinese satellite navigation system CDMA Code Division Multiple Access EMI Electromagnetic interference EOS Electrical Overstress EPA Elect...

Страница 43: ...evision Date Name Comments R01 06 Jun 2016 yzha Advance Information R02 19 Oct 2016 njaf Changed product type number to EVA M8E 0 11 TCXO based updated section 2 4 removed RTC derived from system cloc...

Страница 44: ...blox com Regional Office China Beijing Phone 86 10 68 133 545 E mail info_cn u blox com Support support_cn u blox com Regional Office China Chongqing Phone 86 23 6815 1588 E mail info_cn u blox com Su...

Отзывы: