EVA-8M and EVA-M8 series - Hardware Integration Manual
UBX-16010593 - R06
Design-in
Page 25 of 47
Early Production Information
P
in
NEO-6M
C88-M8M
Pin Name
Typical Assignment
Pin Name
Typical Assignment
Remarks for Migration
recommended in order to achieve the
performance values shown in the
EVA-
M8 Data Sheet
[1]. The Noise Figure
of the C88-M8M is about 2 dB higher
than NEO-6M.
12 GND
GND
GND
GND
No difference
13 GND
GND
GND
GND
No difference
14 MOSI/
CFG_COM0
SPI MOSI / Configuration
pin. Leave open if not used.
RESERVED
Leave open.
Different functions. Only compatible if
this pin is left open!
15 MISO/
CFG_COM1
SPI MISO / Configuration
pin. Leave open if not used.
RESERVED
Leave open.
Different functions. Only compatible if
this pin is left open!
16 CFG_GPS0/
SCK
Power Mode Configuration
pin / SPI Clock. Leave open
if not used.
RESERVED
Leave open.
Different functions. Only compatible if
this pin is left open!
17 RESERVED
Leave open.
RESERVED
Leave open.
No difference
18 SDA
DDC Data
SDA
DDC Data / SPI CS_N
No difference if pin 2 is left open. If pin
2 low = SPI chip select.
19 SCL
DDC Clock
SCL
DDC Clock / SPI SCK
No difference for DDC. If pin 2 low =
SPI clock.
20 TxD
Serial Port
TxD
Serial Port / SPI MISO No difference for UART. If pin 2 low =
SPI MISO.
21 RxD
Serial Port
RxD
Serial Port / SPI MOSI No difference for UART. If pin 2 low =
SPI MOSI.
22 V_BCKP
Backup supply voltage
V_BCKP
Backup supply voltage No difference
23 VCC
Supply voltage
VCC
Supply voltage
24 GND
GND
GND
GND
No difference
Table 8: Replacing NEO-6M by C88-M8M
☞
NEO-6M
cannot
be replaced by C88-M8M if SPI interface or configuration pins (pin 2, pin 14, pin
15 and pin 16) are used.
☞
For the existing NEO-7M and NEO-M8M designs, C88-M8M is one to one compatible with the
exception of some performance difference.
2.13
EOS/ESD/EMI precautions
When integrating GNSS receivers into wireless systems, careful consideration must be given to
electromagnetic and voltage susceptibility issues. Wireless systems include components which can
produce Electrostatic Discharge (ESD), Electrical Overstress (EOS) and Electro-Magnetic
Interference (EMI). CMOS devices are more sensitive to such influences because their failure
mechanism is defined by the applied voltage, whereas bipolar semiconductors are more susceptible
to thermal overstress. The following design guidelines are provided to help in designing robust yet
cost effective solutions.
⚠
To avoid overstress damage during production or in the field it is essential to observe strict
EOS/ESD/EMI handling and protection measures.
⚠
To prevent overstress damage at the RF_IN of your receiver, never exceed the maximum input
power as specified in the
