Transcend Mobile Memory Card TS1GRMMC4 Скачать руководство пользователя | Manualshive

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T

T

T

S

S

S

6

6

6

4

4

4

M

M

M

~

~

~

1

1

1

G

G

G

R

R

R

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M

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4

4

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MMCmobile

Transcend Information Inc.

10

• Serial Access Cycle after Read

Parameter

Symbol

Min.

Unit

Remark

CE Access Time

t

CEA4

285

ns C

L

<=80pF

Read Cycle Time

t

RC4

60

ns C

L

<=80pF

RE Pulse Width

t

RP4

45

ns C

L

<=80pF

RE High Hold Time

t

REH4

15

ns C

L

<=80pF

Data Setup Time

t

DS4

5(TBD)

ns C

L

<=80pF

Data Hold Time

t

DH4

5(TBD)

ns C

L

<=80pF

Ready to RE Low

t

RR4

285

ns C

L

<=80pF

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Содержание Mobile Memory Card TS1GRMMC4

Страница 1: ...ferent Bus width x1 x4 x8 Operating Temperature 25 C 85 C Data access mode Byte mode Fully compatible with MultiMediaCard system specification version 4 0 and backwards compatibility with previous specification Form Factor 18mm x 24mm x 1 4mm Front Back Pin Definition MMC Mode SPI Mode Pin No Name Type Description Name Type Description 1 DAT3 I O PP Data CS I Chip select 2 CMD I O PP OD Command Re...

Страница 2: ...T T TS S S6 6 64 4 4M M M 1 1 1G G GR R RM M MM M MC C C4 4 4 MMCmobile Transcend Information Inc 2 MultiMediaCard Architecture ...

Страница 3: ...e 25 85 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Rating Unit Power Supply Voltage VCC 0 6 4 6 V Input Voltage VIN 0 6 4 6 V Input Output Voltage VI O 0 6 4 6 V Recommended Operation Conditions Parameter Symbol Min Typ Max Unit Power Supply Voltage High Voltage Range VDDH 2 7 3 3 3 6 V Power Supply Voltage Low Voltage Range VDDL 1 65 1 8 1 95 V ...

Страница 4: ...VCCF 0mA Stand by Current ISB 400 TBD uA Input Leakage Current ILI 10 10 uA VIN 0 to VDDH Output Leakage Current ILO 10 10 uA VOUT 0 to VDDH Pin Capacitance CP 7 pF Power Output Voltage VF 1 50 1 8 1 95 V IF 240mA Low Voltage Power Supply Ta 25 to 85 VDDL 1 65V to 1 95V Parameter Symbol Min Typ Max Unit Condition Output High Voltage VOH VDDL 0 2 V IOH 100uA Output Low Voltage VOL 0 2 V IOL 100uA I...

Страница 5: ...6V Parameter Symbol Min Max Unit Notes Clock Frequency Data Transfer Mode fpp 26 52 MHz Clock Frequency Identification Mode fOD 0 400 KHz Clock Low Time tWL 6 5 ns Clock Rise Time tTLH 3 ns Clock Fall Time tTHL 3 ns Input Set up Time tISU 3 ns Input Hold Time tIH 3 ns Output Delay Time tDLY 5 14 ns CL 30pF Signal Rise Time trise 3 ns CL 30pF Signal Fall Time tfall 3 ns CL 30pF ...

Страница 6: ...ming Ta 25 to 85 VDDH 2 7V to3 6V Parameter Symbol Min Max Unit Notes Clock Frequency Data Transfer Mode fpp 0 20 MHz Clock Frequency Identification Mode fOD 0 400 KHz Clock Low Time tWL 10 ns Clock Rise Time tTLH 10 ns Clock Fall Time tTHL 10 ns Input Set up Time tISU 3 ns Input Hold Time tIH 3 ns Output Delay Time tDLY 9 7 35 ns CL 30pF ...

Страница 7: ...in Unit Notes CLE Setup Time tCLS1 30 ns CL 80pF CLE Hold Time tCLH1 15 ns CL 80pF CE Setup Time tCS1 40 ns CL 80pF CE Hold Time tCH1 90 ns CL 80pF ALE Setup Time tALS1 90 ns CL 80pF ALE Hold Time tALH1 75 ns CL 80pF WE Pulse Width tWP1 45 ns CL 80pF Data Setup Time tDS1 90 ns CL 80pF Data Hold Time tDH1 30 ns CL 80pF Address Latch Cycle ...

Страница 8: ...E Setup Time tCLS2 90 ns CL 80pF CE Setup Time tCS2 195 ns CL 80pF ALE Setup Time tALS2 30 ns CL 80pF ALE Hold Time tALH2 15 ns CL 80pF Write Cycle Time tWC2 150 ns CL 80pF WE Pulse Width tWP2 45 ns CL 80pF WE High Hold Time tWH2 105 ns CL 80pF Data Setup Time tDS2 90 ns CL 80pF Data Hold Time tDH2 30 ns CL 80pF Input Data Latch Cycle ...

Страница 9: ...eter Symbol Min Unit Remark CLE Hold Time tCLH3 285 ns CL 80pF CE Hold Time tCH3 195 ns CL 80pF ALE Setup Time tALS3 90 ns CL 80pF Write Cycle Time tWC3 60 ns CL 80pF WE Pulse Width tWP3 45 ns CL 80pF WE High Hold Time tWH3 15 ns CL 80pF Data Setup Time tDS3 30 ns CL 80pF Data Hold Time tDH3 30 ns CL 80pF ...

Страница 10: ...Access Cycle after Read Parameter Symbol Min Unit Remark CE Access Time tCEA4 285 ns CL 80pF Read Cycle Time tRC4 60 ns CL 80pF RE Pulse Width tRP4 45 ns CL 80pF RE High Hold Time tREH4 15 ns CL 80pF Data Setup Time tDS4 5 TBD ns CL 80pF Data Hold Time tDH4 5 TBD ns CL 80pF Ready to RE Low tRR4 285 ns CL 80pF ...

Страница 11: ...body model according to IEC61000 4 2 Durability 10 000 mating cycles test procedure t b d Bending t b d Torque t b d Drop test 1 5m free fall UV light exposure UV 200nm 15Ws cm according to ISO 7816 1 Visual inspection Shape and form No warp page no mold skin complete form no cavities surface smoothness sigma 0 1 mm cm within contour no cracks no pollution fat oil dust etc Above technical informat...

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