Toshiba TA8266HQ, Руководство по описанию и применению

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TA8266HQ
2006-04-28
8
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Peak supply voltage (0.2 s) V
CC (surge)
50 V
DC supply voltage V
CC (DC)
25 V
Operation supply voltage V
CC (opr)
18 V
Output current (peak) I
O (peak)
9 A
Power dissipation P
D
(Note5) 125 W
Operation temperature T
opr
−
40~85 °C
Storage temperature T
stg
−
55~150 °C
Note5: Package thermal resistance
θ
j-T
=
1°C/W (typ.)
(Ta
=
25°C, with infinite heat sink)
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each absolute
maximum rating will never be exceeded in any operating conditions. Before using, creating and/or producing
designs, refer to and comply with the precautions and conditions set forth in this documents.
Electrical Characteristics
(unless otherwise specified V
CC
=
13.2 V, f
=
1 kHz, R
L
=
4
Ω
, Ta
=
25°C)
Characteristics Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Quiescent current I
CCQ
⎯
V
IN
=
0
⎯
200 400 mA
P
OUT
MAX (1)
⎯
V
CC
=
14.4 V, max Power
⎯
35
⎯
P
OUT
MAX (2)
⎯
V
CC
=
13.7 V, max Power
⎯
31
⎯
P
OUT
(1)
⎯
V
CC
=
14.4 V, THD
=
10%
⎯
23
⎯
Output power
P
OUT
(2)
⎯
THD
=
10% 17 20
⎯
W
Total harmonic distortion THD
⎯
P
OUT
=
5 W
⎯
0.02 0.2 %
Voltage gain G
V
⎯
V
OUT
=
0.775 Vrms (0dBm) 32 34 36
Voltage gain ratio
∆
G
V
⎯
V
OUT
=
0.775 Vrms (0dBm)
−
1.0 0 1.0
dB
V
NO
(1)
⎯
Rg
=
0
Ω
, DIN45405
⎯
0.20
⎯
Output noise voltage
V
NO
(2)
⎯
Rg
=
0
Ω
, BW
=
20 Hz~20 kHz
⎯
0.18 0.42
mVrms
Ripple rejection ratio R.R.
⎯
f
rip
=
100 Hz, Rg
=
620
Ω
V
rip
=
0.775 Vrms (0dBm)
40 50
⎯
dB
Cross talk C.T.
⎯
Rg
=
620
Ω
V
OUT
=
0.775 Vrms (0dBm)
⎯
60
⎯
dB
Output offset voltage V
OFFSET
⎯ ⎯ −
150 0
+
150 mV
Input resistance R
IN
⎯ ⎯ ⎯
30
⎯
k
Ω
Stand-by current I
SB
⎯
Stand-by condition
⎯
2 10
µ
A
V
SB
H
⎯
Power: ON 3.0
⎯
V
CC
Stand-by control voltage
V
SB
L
⎯
Power: OFF 0
⎯
1.5
V
V
M
H
⎯
Mute: OFF Open
⎯
Mute control voltage (Note6)
V
M
L
⎯
Mute: ON, R
1
=
10 k
Ω
0
⎯
0.5 V
Mute attenuation ATT M
⎯
Mute: ON,
V
OUT
=
7.75 Vrms (20dBm) at
Mute: OFF.
80 90
⎯
dB
Note6: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and
µ
-COM port
of I
MUTE
>
250
µ
A ability.This means than the mute control terminal : pin 22 must not be pulled-up.