THORLABS PDAPC1, Руководство пользователя, Страница: 13 / 18

Si Switchable Gain Detector, OEM Chapter 6: Specifications
Rev A, April 5, 2021 Page 11
Chapter 6 Specifications
All performance specifications are typical, performed at 25 °C ambient
temperature,
and assume a 50 Ω load, unless stated otherwise.
Performance Specifications
2
0 dB Setting 40 dB Setting
Gain (Hi-Z) 1.51 x 10
3
V/A ±2% Gain (Hi-Z) 1.51 x 10
5
V/A ±2%
Gain (50 Ω)
0.75 x 10
3
V/A ±2%
Gain (50 Ω)
0.75 x 10
5
V/A ±2%
Bandwidth
3
12 MHz Bandwidth
3
90 kHz
Noise (RMS)
258 μV
Noise (RMS)
214 μV
NEP (@

p
)
7.57 x 10
-11
W/

Hz
NEP (@

p
)
3.25 x 10
-12
W/

Hz
Offset
±8 mV (Typ.)
±12 mV (Max)
Offset
±8 mV (Typ.)
±12 mV (Max)
10 dB Setting 50 dB Setting
Gain (Hi-Z)
4.75 x 10
3
V/A ±2%
Gain (Hi-Z)
4.75 x 10
5
V/A ±2%
Gain (50 Ω)
2.38 x 10
3
V/A ±2%
Gain (50 Ω)
2.38 x 10
5
V/A ±2%
Bandwidth
3
1.6 MHz
Bandwidth
3
28 kHz
Noise (RMS)
192 μV
Noise (RMS)
234 μV
NEP (@

p
) 5.8 x 10
-12
W/

Hz NEP (@

p
) 3.69 x 10
-12
W/

Hz
Offset
±8 mV (Typ.)
±12 mV (Max)
Offset
±8 mV (Typ.)
±12 mV (Max)
20 dB Setting 60 dB Setting
Gain (Hi-Z)
1.5 x 10
4
V/A ±2%
Gain (Hi-Z)
1.5 x 10
6
V/A ±5%
Gain (50
Ω)
0.75 x 10
4
V/A ±2%
Gain (50 Ω)
0.75 x 10
6
V/A ±5%
Bandwidth
3 1 MHz
Bandwidth
3 9 kHz
Noise (RMS)
207 μV
Noise (RMS)
277 μV
NEP (@

p
)
3.4 x 10
-12
W/

Hz
NEP (@

p
)
4 x 10
-12
W/

Hz
Offset
±8 mV (Typ.)
±12 mV (Max)
Offset:
±8 mV (Typ.)
±12 mV (Max)
30 dB Setting 70 dB Setting
Gain (Hi-Z)
4.75 x 10
4
V/A ±2%
Gain (Hi-Z)
4.75 x 10
6
V/A ±5%
Gain (50 Ω)
2.38 x 10
4
V/A ±2%
Gain (50 Ω)
2.38 x 10
6
V/A ±5%
Bandwidth
3 260 kHz
Bandwidth
3 3 kHz
Noise (RMS)
211 μV
Noise (RMS)
388 μV
NEP (@

p
)
3.4 x 10
-12
W/

Hz
NEP (@

p
)
4.29 x 10
-12
W/

Hz
Offset
±8 mV (Typ.)
±12 mV (Max)
Offset
±8 mV (Typ.)
±12 mV (Max)
2
The PDAPC1
has a 50 Ω series terminator resistor (i.e. in series with amplifier output). This
forms a voltage divider with any load impedance (e.g. 50 Ω load divides signal in half).
3
Tested at 650 nm wavelength. For NIR wavelengths, the rise time of the photodiode element will
become slower which may limit the effective bandwidth of the amplified detector.