THORLABS PDA36A, Руководство пользователя

Страница: 9 / 16

Si Switchable Gain Detector Chapter 6: Specifications
Rev E, July 15, 2017 Page 7
Chapter 6 Specifications
All performance specifications are typical, performed at 25 °C ambient
temperature, and assume a 50
Ω load, unless stated otherwise.
Performance Specifications 2
0 dB Setting 40 dB Setting
Gain (Hi-Z) 1.51 x 10 3 V/A ±2% Gain (Hi-Z) 1.51 x 10 5 V/A ±2%
Gain (50 Ω ) 0.75 x 10 3 V/A ±2% Gain (50 Ω ) 0.75 x 10 5 V/A ±2%
Bandwidth
3
10.0 MHz Bandwidth
3
150 kHz
Noise (RMS) 300 μ V Noise (RMS) 340 μ V
NEP (@

p
) 2.91 x 10 -11 W/

Hz NEP (@

p
) 5.93 x 10 -13 W/

Hz
Offset
±3 mV (Typ.)
±10 mV (Max)
Offset
±4 mV (Typ.)
±10 mV (Max)
10 dB Setting 50 dB Setting
Gain (Hi-Z) 4.75 x 10 3 V/A ±2% Gain (Hi-Z) 4.75 x 10 5 V/A ±2%
Gain (50 Ω ) 2.38 x 10 3 V/A ±2% Gain (50 Ω ) 2.38 x 10 5 V/A ±2%
Bandwidth
3
5.5 MHz Bandwidth
3
45 kHz
Noise (RMS) 280 μ V Noise (RMS) 400 μ V
NEP (@

p
) 7.52 x 10 -12 W/

Hz NEP (@

p
) 7.94 x 10 -13 W/

Hz
Offset
±4 mV (Typ.)
±10 mV (Max)
Offset
±4 mV (Typ.)
±10 mV (Max)
20 dB Setting 60 dB Setting
Gain (Hi-Z) 1.5 x 10 4 V/A ±2% Gain (Hi-Z) 1.5 x 10 6 V/A ±5%
Gain (5 0 Ω ) 0.75 x 10
4
V/A ±2% Gain (50 Ω ) 0.75 x 10
6
V/A ±5%
Bandwidth 3 1.0 MHz Bandwidth 3 11 kHz
Noise (RMS) 250 μ V Noise (RMS) 800 μ V
NEP (@

p
)
2.34 x 10
-12
W/

Hz
NEP (@

p
)
1.43 x 10
-12
W/

Hz
Offset
±4 mV (Typ.)
±10 mV (Max)
Offset:
±5 mV (Typ.)
±10 mV (Max)
30 dB Setting 70 dB Setting
Gain (Hi-Z)
4.75 x 10
4
V/A ±2%
Gain (Hi-Z)
4.75 x 10
6
V/A ±5%
Gain (50 Ω ) 2.38 x 10 4 V/A ±2% Gain (50 Ω ) 2.38 x 10 6 V/A ±5%
Bandwidth 3 260 kHz Bandwidth 3 5 kHz
Noise (RMS) 260 μ V Noise (RMS) 1.10 mV
NEP (@

p
) 1.21 x 10 -12 W/

Hz NEP (@

p
) 2.10 x 10 -12 W/

Hz
Offset
±4 mV (Typ.)
±10 mV (Max)
Offset
±6 mV (Typ.)
±10 mV (Max)
2 The PDA36A has a 50 Ω series terminator resistor (i.e. in series with amplifier output).
This forms a voltage divider with any load impedance (e.g. 50 Ω load divides signal in
half).
3
For NIR wavelengths, the rise time of the photodiode element will become slower which
may limit the effective bandwidth of the amplified detector.