Si Amplified Photodetectors
Chapter 7: Specifications
Rev B. May 22, 2017
Page 11
Chapter 7 Specifications
Electrical Specifications
a
Detector
Si PIN Photodiode
Active Area
Ø150
μ
m (0.018 mm
2
)
Wavelength Range
λ
400 to 1000 nm
Peak Wavelength
λ
p
740
nm
Optical Input Power, Max
b
350
µW
Peak Responsivity
(
λ
p
)
0.47 A/W
Small Signal Bandwidth
380
MHz
Impulse Response
1 ns (FWHM)
NEP (λ
p
)
c
36
pW/
√
Hz (DC - 380MHz)
Output Noise (RMS)
c
8
mV
RMS
(DC - 380MHz)
Output Current, Max
I
OUT
100
mA
Output Dark Offset
20
mV
Load Impedance
50
Ω
to Hi-Z
Transimpedance Gain
Hi-Z Load
5x10
4
V/A
50 Ω Load
2.5x10
4
V/A
Output Voltage
V
OUT
0 to 5 V (50
Ω
)
0 to 10 V (Hi-Z)
Linear Output
d
, Max
3 V (50
Ω
)
6 V (Hi-Z)
Output Slew Rate, Max
2.5 V/ns (50
Ω
)
5 V/ns (Hi-Z)
a
All performance specifications are typical and assume a 50
Ω
load unless stated otherwise.
b
For Linear Operation
c
Measured with a 50
Ω
Load
d
Linear operating range is restricted due to slew rate limitations at maximum bandwidth.
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