THORLABS DET50B, Руководство пользователя

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Ge Biased Detector
Page 13
Rev G, July 12, 2012
Chapter 7 Specifications
All measurements performed with a 50 Ω load unless stated otherwise.
Electrical Specifications
Detector Ge PIN
Active Area Ø5 mm (19.6 mm
2
)
Wavelength Range λ 800 to 1800 nm
Peak Wavelength λ
p
1550 nm
Peak Response
2
ℜ
( λ
p
)
0.85 A/W
Shunt Resistance R
sh
2 k Ω
Diode Capacitance C
J
3000 pF
Rise Time
2,3
t
r
440 ns
NEP ( λ
p
) 4.0 x 10
-12
W/ √ Hz
Bias Voltage V
R
5 V
Dark Current
2
(with 1 M Ω Load) I
D
40 µA
Output Voltage V
OUT
0 to 5 V
General
On/Off Switch Slide
Battery Check Switch Momentary Pushbutton
Output BNC (DC Coupled)
Package Size 2.8" x 1.9" x 0.83"
(70 mm x 48 mm x 21 mm)
PD Surface Depth 0.13" (3.4 mm)
Weight 0.2 lbs
Accessories SM1T1 Coupler
SM1RR Retainer Ring
Storage Temp -20 to 70 °C
Operating Temp 10 to 50 °C
Battery A23, 12 V
DC
, 40 mAh
Low Battery Voltage
4
(See Battery Check)
V
OUT
(Hi-Z) ~9 V
V
OUT
(50 Ω ) ~400 mV
2
Measured with specified bias voltage of 5.0 V
3
Low battery voltage will result in slower rise times and decreased bandwidth.
4
Assumes the battery voltage drops below 9.6 V. The reverse protection diode generates a 0.6 V drop.