
List of Materials
21
SLUUBV6 – August 2018
Copyright © 2018, Texas Instruments Incorporated
Using the UCC28780EVM-021, 45-W, 20-V High-Density Silicon (Si) Based,
Active-Clamp Flyback Converter/Evaluation Module
Table 6. UCC28780EVM-021 List of Materials (continued)
QTY
DES
DESCRIPTION
PART NUMBER
MANUFACTURER
1
D5
Diode, ultrafast, 600 V, 1 A, AEC-Q101, SMAF
ES1JAF
Fairchild
Semiconductor
1
D6
Diode, zener, 22 V, 300 mW, SOD-523
BZT52C22T-7
Diodes Inc.
1
DB1
Diode, P-N-Bridge, 1000 V, 4 A, Z4-D
Z4DGP410L-HF
Comchip
Technology
1
F1
Fuse, 2.5 A, 250 VAC, TH
RST 2.5-BULK
Bel Fuse
4
H1, H2, H3, H4
Machine screw pan phillips 4-40
NSP-4-4-01
Essentra
Components
4
H5, H6, H7, H8
Standoff, hex, 0.5"L #4-40 Nylon
1902C
Keystone
2
J1, J2
Terminal block, 5.08 mm, 2x1, Brass, TH
ED120/2DS
On-Shore
Technology
1
L1
Inductor, unshielded drum core, ferrite, 22 uH, 1.7 A,
0.102 ohm, TH
7447462220
Wurth Elektronik
1
L2
Coupled inductor, 0.014 ohm, TH
019-8917-00R
Precision
Incorporated
1
L3
Inductor, unshielded drum core, ferrite, 1 uH, 8 A,
0.006 ohm, TH
7447462010
Wurth Elektronik
1
L4
Inductor, wirewound, ferrite, 680 nH, 0.19 A, 0.938
ohm, SMD
LQH31MNR68K03L
MuRata
1
Q1
MOSFET, N-channel, 150 V, 56 A, PG-TDSON-8
BSC160N15NS5ATM
A1
Infineon
Technologies
1
Q2
MOSFET, N-channel, 600 V, 0.021 A, AEC-Q101,
SOT-23
BSS126H6327XTSA2
Infineon
Technologies
2
Q3, Q4
MOSFET, N-channel, 600 V, 10.6 A, DPAK
IPD60R380P6ATMA1
Infineon
Technologies
1
Q5
MOSFET, N-channel, 60 V, 0.17 A, SOT-23
2N7002-7-F
Diodes Inc.
1
R1
Resistor, 1.00 k
Ω
, 1%, 0.1 W, 0603
ERJ-3EKF1001V
Panasonic
1
R2
Resistor, 2.21 M
Ω
, 1%, 0.25 W, 1206
RC1206FR-072M21L
Yageo America
1
R3
Resistor, 0
Ω
, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
ERJ-3GEY0R00V
Panasonic
3
R4, R12, R23
Resistor, 10.0
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW040210R0FKE
D
Vishay-Dale
1
R5
Resistor, 33
Ω
, 5%, 0.125 W, AEC-Q200 Grade 0,
0805
ERJ-6GEYJ330V
Panasonic
1
R6
Resistor, 49.9
Ω
, 1%, 0.1 W, AEC-Q200 Grade 0,
0402
ERJ-2RKF49R9X
Panasonic
1
R7
Resistor, 196 k
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW0402196KFKE
D
Vishay-Dale
1
R8
Resistor, 536
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW0402536RFKE
D
Vishay-Dale
1
R9
Resistor, 22.1 k
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW040222K1FKE
D
Vishay-Dale
1
R10
Resistor, 280 k
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW0402280KFKE
D
Vishay-Dale
1
R11
Resistor, 11.0 k
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW040211K0FKE
D
Vishay-Dale
1
R13
Resistor, 34.0 k
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW040234K0FKE
D
Vishay-Dale
1
R14
Resistor, 12.7 k
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW040212K7FKE
D
Vishay-Dale
1
R15
Resistor, 105 k
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW040295K3FKE
D
Vishay-Dale
1
R16
Resistor, 47.5 k
Ω
, 1%, 0.063 W, AEC-Q200 Grade 0,
0402
CRCW040247K5FKE
D
Vishay-Dale
1
R17
Resistor, 2.49
Ω
, 1%, 0.1 W, 0603
RC0603FR-072R49L
Yageo