Texas Instruments TPS7A13EVM-057 Скачать руководство пользователя страница 11

5 TPS7A13 EVM Schematic

Figure 5-1

 shows a schematic for the TPS7A13EVM-057.

Re vis ion His tory

Rev

Notes

Approved by

ECN #

Approved Da te

N/A

N/A

N/A

N/A

N/A

GND

2.00k

R9

1.00k

R10

1

2

3

J7

TP1

GND

GND

2.2

µ

F

50V

C1

2.2

µ

F

50V

C6

GND

2.2

µ

F

10V

C4

2.2

µ

F

10V

C7

10V

1uF

C5

10V

1uF

C8

J3

J4

J 12

J 11

1
2

J8

1

2
3
4
5

J2

1

2
3
4
5

J1

VOUT

GND

VIN

Vin Re commended Ma x = 2.2V

Vout Ma x = 2.05V
Iout Ma x = 300mA

1nF
100V

C16

TP2

TP4

VDD

A1

OUTH

A2

OUTL

B2

IN-

C2

GND

B1

IN+

C1

LMG1020YFFR

U2

1

2

3

4

5

J18

J 17

VDD

J 21

GND

50V
10uF

C15

50V
10uF

C14

1.00k

R1

1
2

J 13

50V
0.1uF

C13

2.2

µ

F

10V

C2

10V

2.2uF

C3

154

R5

154

R6

154

R4

154

R3

GND

EN

VIN

EN

VOUT

154

R2

100V
1pF

C11

0

R11

0

R7

3

5,

6

,8

4,

7

1,

2,

Q1
CS D17313Q2

1

2

3

4

5

J22

1nF
100V

C17

0

R12

J 15

J 16

1

2

3

4

5

J19

50V
0.015uF

C12

49.9

R13

GND

GND

J 20

TP5

1

2

J10

BIAS

C2

EN

B2

IN

A2

GND

C1

OUT

A1

SENSE

B1

TPS7A1309PYCKR

U1

J6

J9

1

2

3

4

5

6

J 14

BIAS

BIAS

SENSE

BIAS Re commended Ma x = 5.5V

SENSE

J5

VDD

IN+

IN-

OUTL

2.49k

R8

OUTH

TP3

50V
0.1uF

C10

2.2

µ

F

50V

C9

VDD Re commended Ma x = 5.4V

Figure 5-1. Schematic

www.ti.com

TPS7A13 EVM Schematic

SBVU074 – NOVEMBER 2021

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TPS7A13EVM-057 Evaluation Module

11

Copyright © 2021 Texas Instruments Incorporated

Содержание TPS7A13EVM-057

Страница 1: ...a schematic diagram and a bill of materials BOM Throughout this document the terms evaluation board evaluation module and EVM are synonymous with the TPS7A13EVM 057 Table of Contents 1 Trademarks 2 2...

Страница 2: ...Assembly Layer and Silk Screen 9 Figure 4 2 Top Layer Routing 9 Figure 4 3 Layer 2 9 Figure 4 4 Layer 3 9 Figure 4 5 Bottom Layer Routing 10 Figure 4 6 Bottom Assembly Layer and Silk Screen 10 Figure...

Страница 3: ...und connection 3 1 3 VOUT and GND VOUT and GND are the connection terminals for the output load The VOUT terminal is the positive connection and the GND terminal is the negative that is ground connect...

Страница 4: ...ncy kelvin connection that allows accurate measurements of the load transient MOSFET gate to source voltage 3 2 8 TP2 TP3 and TP4 TP2 TP3 and TP4 allow the user to measure the gate drive resistances R...

Страница 5: ...header 1 Place a 2 pin shunt across the header to tie VIN to EN to enable the device 2 Place a 2 pin shunt across the header to tie GND to EN to disable the device Alternatively by connecting an exter...

Страница 6: ...urrent probes a 10 AWG wire can be used WARNING The sensors of some current probes are tied to GND and cannot come into contact with energized conductors See the user manual of your current probe for...

Страница 7: ...of 1 ms to prevent excessive heating of the pulsed resistors R2 R3 R4 R5 and R6 Configure a function generator for the 50 output in a 0 V DC to 5 V DC square pulse If necessary burst mode can be confi...

Страница 8: ...4 TPS7A13EVM 057 Load Transient Results 300 mA to 1 mA Load Step Setup www ti com 8 TPS7A13EVM 057 Evaluation Module SBVU074 NOVEMBER 2021 Submit Document Feedback Copyright 2021 Texas Instruments Inc...

Страница 9: ...LDO LMG1020YFFR gate driver and pulsed resistors R2 R3 R4 R5 and R6 are most at risk of raising to a high junction temperature during normal operation Figure 4 1 Top Assembly Layer and Silk Screen Fig...

Страница 10: ...Layer Routing Figure 4 6 Bottom Assembly Layer and Silk Screen Board Layout www ti com 10 TPS7A13EVM 057 Evaluation Module SBVU074 NOVEMBER 2021 Submit Document Feedback Copyright 2021 Texas Instrume...

Страница 11: ...50V 10uF C15 50V 10uF C14 1 00k R1 1 2 J13 50V 0 1uF C13 2 2 F 10V C2 10V 2 2uF C3 154 R5 154 R6 154 R4 154 R3 GND EN VIN EN VOUT 154 R2 100V 1pF C11 0 R11 0 R7 3 5 6 8 4 7 1 2 Q1 CSD17313Q2 1 2 3 4...

Страница 12: ...anufacturing J18 1 SMA Straight Jack Gold 50 Ohm TH SMA Straight Jack TH 901 144 8RFX Amphenol RF Q1 1 30V MOSFET N CH 30 V 5 A DQK0006C WSON 6 DQK0006C CSD17313Q2 Texas Instruments None R8 1 2 49k RE...

Страница 13: ...ht Jack TH 901 144 8RFX Amphenol RF J8 J10 0 Terminal Block 5 mm 2x1 Tin TH Terminal Block 5 mm 2x1 TH 691 101 710 002 Wurth Elektronik J13 0 Header 100mil 2x1 Gold TH Sullins 100mil 1x2 230 mil above...

Страница 14: ...ther than TI b the nonconformity resulted from User s design specifications or instructions for such EVMs or improper system design or c User has not paid on time Testing and other quality control tec...

Страница 15: ...These limits are designed to provide reasonable protection against harmful interference in a residential installation This equipment generates uses and can radiate radio frequency energy and if not in...

Страница 16: ...instructions set forth by Radio Law of Japan which includes but is not limited to the instructions below with respect to EVMs which for the avoidance of doubt are stated strictly for convenience and s...

Страница 17: ...any interfaces electronic and or mechanical between the EVM and any human body are designed with suitable isolation and means to safely limit accessible leakage currents to minimize the risk of electr...

Страница 18: ...R DAMAGES ARE CLAIMED THE EXISTENCE OF MORE THAN ONE CLAIM SHALL NOT ENLARGE OR EXTEND THIS LIMIT 9 Return Policy Except as otherwise provided TI does not offer any refunds returns or exchanges Furthe...

Страница 19: ...change without notice TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource Other reproduction and display of thes...

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